Selective Thin-Layer Deposition Using Radical-Scavenging Surfaces
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Solution Overview
Problem
The challenge of fabricating integrated circuit devices with high integration and high speed operation is exacerbated by reduced process margins in exposure processes for patterning fine patterns, leading to difficulties in manufacturing semiconductor devices.
Innovation Solution
A method of depositing a thin layer using an initiated chemical vapor deposition (iCVD) process, where a substrate with distinct portions is treated with an initiator and monomer, forming radicals through thermal, photodecomposition, or oxidation-reduction processes, and a polymer is formed via radical reactions, while the second portion acts as a radical scavenger to prevent layer formation, allowing selective deposition on desired surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition methods are used to form thin layers, then complete coverage is achieved, but selective deposition on specific portions cannot be realized
Solution Approach 1:
The substrate is designed with regions of different oxidation states (first portion with first oxidation state, second portion with second oxidation state) to create local chemical property differences. This enables the initiator to selectively react only with the first portion, achieving precise spatial control of thin layer deposition without requiring masks or inhibitors.
2Manufacturing precision
If mask patterns or inhibitors are used to achieve selective deposition, then deposition selectivity is improved, but manufacturing complexity and costs increase
Solution Approach 1:
The patent extracts and eliminates the need for mask patterns and inhibitor materials from the deposition process. Instead, selectivity is achieved by taking advantage of the inherent chemical differences (oxidation states) of substrate regions, allowing direct selective reaction with the initiator without additional controlling layers or materials.
Solution Approach 2:
The substrate itself provides the selectivity mechanism through its own chemical properties (different oxidation states in different portions). The first portion's specific oxidation state enables it to serve as a self-selecting region that naturally attracts and reacts with the initiator, eliminating the need for external control mechanisms.
3Manufacturing precision
If additional materials like inhibitors or masks are introduced for selective deposition, then deposition control is improved, but manufacturing costs increase
Solution Approach 1:
The patent removes the need for inhibitor materials and mask patterns from the process. Selective deposition is achieved using only the initiator and the substrate's inherent chemical properties, eliminating additional material consumption and associated costs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances manufacturing process reliability and reduces costs by enabling selective thin layer deposition without the need for additional inhibitors or mask patterns, ensuring the thin layer is formed only on specific substrate portions.
Implementation Method 1
The initiator includes a material forming radicals by application of a decomposition energy inducing one of a thermal decomposition process, a photodecomposition process, and an oxidation-reduction reaction process
Implementation Method 2
The initiator includes a material forming radicals by application of a decomposition energy inducing one of a thermal decomposition process, a photodecomposition process, and an oxidation-reduction reaction process
Implementation Method 3
The initiator includes a material forming radicals by application of a decomposition energy inducing one of a thermal decomposition process, a photodecomposition process, and an oxidation-reduction reaction process
Implementation Method 4
The monomer includes at least one multiple bond between carbon atoms. A polymer is formed by an initiation reaction between the radical and the monomer
Implementation Method 5
The second portion includes a material having a plurality of oxidation states
Data Source
AI summary
A method of depositing a thin layer includes forming a substrate including first and second portions. A thin layer is formed only on the first portion. The second portion includes a material having a plurality of oxidation states. The forming of the thin layer includes supplying an initiator and a monomer on the first and second portions. The initiator includes a material forming radicals by application of a decomposition energy inducing one of a thermal decomposition process, a photodecomposition process, and an oxidation-reduction reaction process. A deposition process is performed reacting the initiator and the monomer with each other. The performing of the deposition process includes applying the decomposition energy to form the radicals from the initiator. The monomer includes at least one multiple bond between carbon atoms. A polymer is formed by an initiation reaction between the radical and the monomer. The thin layer includes the polymer.