Selective Titanium Nitride Film Formation via Adsorption Suppression
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Solution Overview
Problem
The existing semiconductor manufacturing processes are complex and costly due to the need for selective film formation on specific bases exposed on a substrate, often requiring intricate patterning and plasma processes that can damage the wafer.
Innovation Solution
A method involving the sequential supply of an adsorption suppressor (DMATMS) at a first temperature, followed by thermal annealing at a higher temperature, and then forming a titanium nitride film on a specific base by supplying TiCl4 and NH3 gases at a lower temperature, allowing selective film formation without plasma damage and simplifying the process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If selective film formation is performed using conventional patterning and plasma processes, then film formation precision is improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent applies preliminary action by pre-adsorbing a suppressor substance onto specific base regions before film formation. This preparatory step creates selective regions that will subsequently receive or reject film deposition, eliminating the need for complex patterning processes while achieving precise selective film formation.
Solution Approach 2:
The suppressor substance acts as an intermediary between the base and the film-forming gas. By introducing this intermediate layer, the patent enables selective film formation through chemical suppression rather than physical patterning, thereby simplifying the overall process complexity while maintaining manufacturing precision.
2Manufacturing precision
If plasma processes are used for selective film formation, then film formation precision is improved, but harmful factors increase due to plasma damage
Solution Approach 1:
The patent substitutes the plasma-based mechanical/chemical process with a thermal field-based process. By using temperature control and suppressor adsorption instead of plasma, the method achieves selective film formation without the damaging effects of plasma exposure on the wafer.
Solution Approach 2:
The patent converts the potential harm of non-selective film formation into a benefit by using the suppressor substance to actively prevent film formation on unwanted regions. The suppressor's presence transforms from a potential obstacle into a useful selective control mechanism that protects certain areas while allowing film formation on others.
3Manufacturing precision
If conventional selective growth processes are used, then film formation precision is improved, but productivity decreases due to process complexity
Solution Approach 1:
The patent merges multiple discrete steps (patterning, film formation, suppression) into a unified selective growth process. By combining the suppressor adsorption and film formation into a single integrated process flow, the method maintains selective film formation precision while reducing the total number of process steps, thereby improving productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the selective formation of titanium nitride films on specific bases while inhibiting film formation on others, simplifying the semiconductor manufacturing process, improving productivity, and reducing costs by omitting patterning steps and avoiding plasma damage.
Implementation Method 1
supplying an adsorption suppressor to a substrate having a surface on which a first base and a second base are exposed under a first temperature to adsorb the adsorption suppressor on a surface of one base of the first base and the second base
Implementation Method 2
thermally annealing the substrate under a second temperature higher than the first temperature after adsorbing the adsorption suppressor on the surface of the one base
Implementation Method 3
forming a film on a surface of the other base different from the one base of the first base and the second base by supplying a film-forming gas to the thermally-annealed substrate under a third temperature lower than the second temperature
Data Source
AI summary
There is provided a technique that includes: (a) supplying an adsorption suppressor to a substrate having a surface on which a first base and a second base are exposed under a first temperature to adsorb the adsorption suppressor on a surface of one base of the first base and the second base; (b) thermally annealing the substrate under a second temperature higher than the first temperature after adsorbing the adsorption suppressor on the surface of the one base; and (c) forming a film on a surface of the other base different from the one base of the first base and the second base by supplying a film-forming gas to the thermally-annealed substrate under a third temperature lower than the second temperature.