Selective Vapor Deposition Inhibitor Reactant for Semiconductor Patterning
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Solution Overview
Problem
Existing semiconductor fabrication processes face challenges in selectively depositing materials, particularly in reducing the need for patterning and etching steps, and achieving enhanced scaling in narrow structures, with thermal and plasma-enhanced deposition methods being used but requiring improvements for industrial-scale applications.
Innovation Solution
A method of selectively depositing inhibitor material on a substrate using a vapor-phase inhibitor reactant comprising a silicon atom bonded to oxygen or a halogen, which forms inhibitor material on dielectric surfaces while minimizing deposition on conductive surfaces, allowing for the subsequent deposition of target materials with reduced patterning and etching steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional patterning methods are used to deposit different materials on semiconductor substrates, then material deposition accuracy is maintained, but the number of processing steps increases and cost increases
Solution Approach 1:
The patent extracts and removes the need for conventional patterning steps by implementing selective deposition directly. The selective deposition process deposits materials only on desired surfaces without requiring separate patterning and etching steps, thereby reducing the overall number of processing steps while maintaining material deposition accuracy.
Solution Approach 2:
The patent applies preliminary action by using surface treatment or modification before deposition to enable selective material deposition. By pre-treating surfaces to create different surface properties (e.g., hydrophilic vs. hydrophobic, or different surface energies), the process enables direct selective deposition without subsequent patterning steps.
2Productivity
If selective deposition is used to reduce patterning steps, then processing cost decreases and productivity increases, but deposition selectivity and precision must be improved
Solution Approach 1:
The patent applies local quality by creating different surface properties in different locations on the substrate. Through selective surface treatment or the use of different surface materials, the process creates localized variations in surface energy, hydrophilicity, or reactivity, enabling selective deposition on specific surfaces or regions while maintaining high deposition selectivity and precision.
Solution Approach 2:
The patent utilizes parameter changes by varying deposition parameters (such as temperature, pressure, precursor flow rates, or plasma power) to achieve selective deposition on different surfaces. By controlling these parameters, the process can selectively deposit materials on desired surfaces while preventing deposition on other surfaces, thereby achieving high deposition selectivity.
3Reliability
If thermal deposition methods are used, then compatibility with sensitive materials is improved, but deposition rate and film quality may be limited compared to plasma-enhanced methods
Solution Approach 1:
The patent employs composite materials or hybrid approaches by combining thermal deposition with selective surface treatment or modification. This allows the use of gentle thermal deposition processes that are compatible with sensitive materials, while the surface treatment enhances deposition selectivity and can improve film quality without requiring high-energy plasma processes.
4Productivity
If plasma-enhanced deposition is used, then deposition rate and film quality improve, but compatibility with sensitive materials may be compromised
Solution Approach 1:
The patent applies parameter changes by carefully controlling plasma parameters (such as power density, gas composition, and pressure) to reduce the harshness of plasma exposure. By optimizing these parameters, the process achieves adequate deposition rates and film quality while maintaining compatibility with sensitive materials through reduced plasma damage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables selective deposition of inhibitor and target materials with high selectivity, reducing the need for patterning and etching steps, and enhances scaling in narrow structures, improving semiconductor device fabrication efficiency and accuracy.
Implementation Method 1
contacting the substrate with a vapor-phase inhibitor reactant, the inhibitor reactant comprising a silicon atom bonded to a first atom and to a second atom... the inhibitor reactant selectively forms inhibitor material on the first surface
Data Source
AI summary
The disclosure relates to methods, processing assemblies, reactants and vapor deposition vessels for selective vapor-phase deposition of inhibitor material on a substrate comprising two surfaces. In some embodiments of the disclosure, the inhibition material is deposited on the first surface of the substrate, whereas substantially no inhibitor material is deposited on the second surface of the substrate. The inhibitor material is formed by contacting the substrate with a vapor-phase inhibitor reactant comprising a silicon atom bonded to an oxygen atom and to a second atom selected from nitrogen and halogens.