Memory Selector Layer Porosity for Uniform Dopant Implantation
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Solution Overview
Problem
Existing semiconductor devices face challenges in efficiently controlling access to memory layers due to non-uniform dopant distribution and potential damage from high ion implantation energy, which affects the performance and stability of selector layers.
Innovation Solution
A semiconductor device with a selector layer comprising a porous material and an insulating material mixed with dopants, where the dopants are uniformly distributed using a porous layer to absorb and implant ions, reducing the need for excessive ion implantation energy and preventing damage, thereby enhancing the selector layer's characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high ion implantation energy is used to implant dopants into the insulating layer, then dopant implantation efficiency is improved, but damage to the selector layer increases
Solution Approach 1:
The patent introduces a porous layer between the substrate and the insulating layer. This porous layer acts as an energy-absorbing medium that captures excess ion implantation energy, preventing it from reaching and damaging the selector layer while still allowing effective dopant implantation into the insulating layer.
Solution Approach 2:
The porous layer serves as an intermediary element in the ion implantation process. It mediates between the ion beam and the selector layer, controlling energy transfer and protecting the selector layer from direct exposure to high-energy ions while maintaining the effectiveness of dopant implantation.
2Ease of manufacture
If dopant distribution in the selector layer is non-uniform, then manufacturing process is simpler, but selector layer performance deteriorates
Solution Approach 1:
The porous layer provides a large surface area and interconnected pore structure that facilitates uniform dopant distribution throughout the insulating layer and into the selector layer. The porous structure acts as a distribution network that evenly disperses dopants during the implantation process.
Solution Approach 2:
The patent modifies the physical structure of the layer by introducing porosity, which changes the material's density, surface area, and ion transport properties. This parameter change enables more uniform dopant distribution while maintaining manufacturing feasibility.
3Reliability
If selector layer thickness is increased to improve performance, then device reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The porous layer enables the formation of thicker selector layers with uniform dopant distribution. The porous structure provides a scaffold that maintains structural integrity and facilitates controlled dopant penetration throughout the increased thickness, allowing performance improvement without excessive manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution ensures more uniform dopant distribution and increased dopant content in the selector layer, improving the threshold switching rate and allowing for thicker selector layers without compromising performance, leading to stable and efficient operation.
Implementation Method 1
performing an ion implantation to implant a dopant into the porous layer and the insulating layer
Implementation Method 2
a dopant that is present in the layer and breaks a bond between constituent elements of the insulating material
Data Source
AI summary
A semiconductor device includes a plurality of memory cells. Each memory cell includes: a memory layer configured to store data; and a selector layer configured to control an access to the memory layer, wherein the selector layer includes a layer which includes an insulating material and a porous material that are mixed, and a dopant that is present in the layer and breaks a bond between constituent elements of the insulating material.