Selenium Glass Frit Conductive Paste for Controlled Passivation Etching

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Solution Overview

Problem

Current conductive metal pastes used in crystalline silicon solar cells have challenges in achieving a balance between electrical contact resistance and carrier recombination due to the high glass transition temperature of lead-boron-silicon glass frits, which can lead to inadequate etching and excessive carrier recombination.

Innovation Solution

A conductive paste composition is developed using a lead-boron-selenium glass frit, which replaces the traditional lead-boron-silicon glass frit, along with a conductive component and an aluminum elemental component, to form a low-resistance electrical contact with p-type semiconductors in n-type crystalline silicon solar cells.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If lead-boron-silicon glass frit is used in conductive metal paste, then the paste can provide basic etching capability, but the high glass transition temperature results in inadequate etching and excessive carrier recombination

Engineering Contradiction:
Improveglass transition temperatureVSAvoidetching control
Core Design Contradiction:
TemperatureVSManufacturing precision

Solution Approach 1:

The patent changes the chemical composition parameters of the glass frit by replacing silicon oxide with selenium oxide, which fundamentally alters the glass transition temperature from high to low, enabling adequate etching at lower temperatures and preventing excessive carrier recombination

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite glass frit system combining lead oxide, boron oxide, and selenium oxide, where the synergistic interaction between these components achieves both low glass transition temperature and controlled etching capability, resolving the contradiction between temperature and etching precision

Inventive Principle:
Principle #40Composite materials

2Temperature

If boron content is reduced to lower glass transition temperature, then the Tg point decreases, but the glass frit becomes difficult to maintain amorphous state and crystallizes easily

Engineering Contradiction:
Improveglass transition temperatureVSAvoidamorphous state stability
Core Design Contradiction:
TemperatureVSStability of the object's composition

Solution Approach 1:

The patent changes the compositional parameters by introducing selenium oxide as a key component, which provides low-temperature glass formation characteristics while maintaining amorphous state stability, eliminating the need to reduce boron content

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

Selenium oxide acts as an intermediary component that mediates between the conflicting requirements of low glass transition temperature and amorphous state stability, enabling the glass frit to achieve both properties simultaneously through its unique chemical characteristics

Inventive Principle:
Principle #24Intermediary (Mediator)

3Temperature

If alkali metal, alkaline earth metal, or rare earth metal content is increased to reduce glass transition temperature, then the Tg point decreases, but photovoltaic device efficiency is affected due to high corrosivity

Engineering Contradiction:
Improveglass transition temperatureVSAvoidcorrosivity
Core Design Contradiction:
TemperatureVSObject-generated harmful factors

Solution Approach 1:

The patent changes the chemical composition by using selenium oxide instead of increasing alkali/alkaline earth/rare earth metals, achieving low glass transition temperature through a different chemical mechanism that does not involve high corrosivity

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent converts the potential harm of aggressive etching into a benefit by using selenium oxide, which provides sufficient etching capability at lower temperatures without the excessive corrosivity that would damage the photovoltaic device and reduce efficiency

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

4Temperature

If thallium is added to reduce glass transition temperature, then the Tg point decreases effectively, but the paste becomes highly toxic and harmful to the environment

Engineering Contradiction:
Improveglass transition temperatureVSAvoidtoxicity
Core Design Contradiction:
TemperatureVSObject-affected harmful factors

Solution Approach 1:

The patent replaces the highly toxic thallium with selenium oxide, which achieves the same glass transition temperature reduction effect without the severe toxicity and environmental harm, converting a harmful solution into a beneficial one

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The patent changes the toxicological parameters of the glass frit composition by substituting thallium with selenium oxide, maintaining the functional parameter of low glass transition temperature while dramatically improving the safety and environmental compatibility parameters

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The new conductive paste composition achieves a decent fill factor and photoelectric conversion efficiency by controlling the etching of the passivation film and forming a low-resistance electrical contact, while also being free from highly toxic elements like thallium, reducing environmental harm and facilitating recycling.

Implementation Method 1

the lead-boron-selenium glass frit...is used to etch the passivation film in the n-type crystalline silicon solar cell to form the electrical contact with the p-type semiconductor

Methodology Applied
Scientific EffectEtching:

Implementation Method 2

form a low-resistance ohmic contact

Methodology Applied
Scientific EffectOhmic contact:

Data Source

PatentUS12349499B2Conductive paste composition, preparation method and use thereof, crystalline silicon solar cell
Publication Date: 2025.07.01 SOLAMET ELECTRONIC MATERIALS (DONGGUAN) CO LTD
  • US12349499B2 patent drawing
  • US12349499B2 patent drawing

AI summary

A conductive paste composition, a preparation method and a use thereof, as well as a crystalline silicon solar cell are disclosed. The conductive paste composition contains a silver powder and an aluminum powder, and contains a lead-boron-selenium glass frit or a bismuth-boron-selenium glass frit. The conductive paste composition can perform effective etching of a passivation film of an n-type crystalline silicon solar cell during a high temperature firing, and also does not over-oxidize the aluminum powder contained therein, thereby forming an electrode having decent electrical contact with a p-type doped emitter.