Selenium Photoelectric Conversion Layer Pixel Circuit Compensation
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Solution Overview
Problem
CMOS image sensors face challenges in miniaturization, leading to increased difficulty in manufacturing transistors with uniform electrical characteristics, resulting in variations that affect imaging quality, power consumption, and operational speed.
Innovation Solution
An imaging device with a pixel circuit that includes oxide semiconductors and a specific configuration of transistors and capacitors to compensate for variations in electrical characteristics, using a selenium-based photoelectric conversion element for high sensitivity and dynamic range.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If transistors are miniaturized to increase pixel density, then imaging resolution is improved, but manufacturing precision deteriorates due to increased difficulty in producing transistors with uniform electrical characteristics
Solution Approach 1:
The patent changes the material parameter of the photoelectric conversion layer from conventional silicon-based materials to selenium-based materials. This material substitution fundamentally alters the electrical characteristics and photoelectric conversion efficiency, enabling high-resolution imaging with miniaturized pixels while maintaining uniform electrical characteristics through the inherent properties of selenium-based semiconductors
Solution Approach 2:
The patent employs composite material structures including selenium-based photoelectric conversion layers combined with specific transistor configurations (such as those using oxide semiconductors or other semiconductor materials). This composite approach allows the system to achieve both miniaturization and electrical characteristic uniformity by leveraging the complementary properties of different materials
2Measurement precision
If data is written to capacitor for compensating transistor variation by each imaging, then imaging quality is improved, but total imaging time increases and power consumption increases
Solution Approach 1:
The patent implements preliminary compensation actions during the transistor manufacturing process or before imaging operations. By pre-characterizing transistors and pre-adjusting circuit parameters, the system compensates for transistor variations without requiring time-consuming capacitor writes during each imaging operation, thus maintaining high imaging quality while reducing total imaging time
Solution Approach 2:
The patent designs circuits that automatically compensate for transistor variations through self-regulating mechanisms. The circuit configuration allows transistors to self-adjust their operating parameters based on their inherent electrical characteristics, eliminating the need for external compensation operations and reducing both time and power consumption
3Volume of moving object
If transistors are miniaturized for high-resolution imaging, then imaging resolution is improved, but power consumption increases due to difficulty in reducing variation
Solution Approach 1:
The patent changes the material parameters and circuit operating parameters to achieve low-power operation in miniaturized pixels. By using selenium-based photoelectric conversion materials with high efficiency, the system requires less energy per pixel operation, offsetting the power consumption increase from miniaturization and variation compensation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables high-quality imaging with reduced power consumption, high sensitivity, wide dynamic range, and low noise, suitable for high-speed operation while maintaining reliability and cost-effectiveness.
Implementation Method 1
The photoelectric conversion element contains selenium in a photoelectric conversion layer
Data Source
AI summary
To provide an imaging device capable of obtaining high-quality imaging data. The imaging device includes a first circuit and a second circuit. The first circuit includes a photoelectric conversion element, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first capacitor, a second capacitor, and a third capacitor. The second circuit includes a seventh transistor. The imaging device can compensate variation in electrical characteristics of an amplifier transistor included in the first circuit.