Self-Aligned ALD Toolset With Segmented Process Stations
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Solution Overview
Problem
Current atomic layer deposition (ALD) processes face challenges with incompatible chemistries leading to chemical vapor deposition (CVD) processes, resulting in less thickness control and gas phase particles, and self-aligned features are difficult to form without misalignment, causing device performance issues like shorting and lateral growth.
Innovation Solution
An integrated processing tool with multiple separated process stations, including a deposition, anneal, and treatment station, allows for controlled film deposition and annealing, followed by plasma treatment and selective etching to form self-aligned films with precise thickness and alignment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If incompatible chemistries are mixed in a single processing chamber, then a CVD process occurs, but thickness control is reduced and gas phase particles are created causing defects
Solution Approach 1:
The processing chamber is divided into multiple separate processing stations (first processing station for depositing first material, second processing station for depositing second material) that are spatially separated. This segmentation prevents incompatible chemistries from mixing while maintaining high throughput through rapid wafer transfer between stations, thus resolving the contradiction between processing speed and film thickness control.
2Productivity
If a single processing chamber is used, then device throughput is improved, but self-aligned features become difficult to form causing misalignment
Solution Approach 1:
The processing chamber is segmented into multiple specialized stations, each optimized for specific materials. The wafer is rapidly transferred between these spatially separated stations, enabling formation of self-aligned features with precise control while maintaining high device throughput. The segmentation allows incompatible chemistries to be processed in separate zones without cross-contamination.
Solution Approach 2:
A shower curtain or gas barrier acts as an intermediary element between adjacent processing stations to prevent gas phase mixing of incompatible chemistries while allowing rapid wafer transfer. This intermediary maintains the integrity of each processing zone's chemistry while enabling high-speed sequential processing across multiple stations.
3Manufacturing precision
If spatial separation of processing stations is implemented, then self-aligned features are achieved with precise alignment, but device complexity increases
Solution Approach 1:
The processing tool is segmented into multiple specialized stations arranged in a compact configuration. Each station is optimized for specific material deposition with dedicated chemistry delivery systems. The segmentation enables precise self-aligned feature formation while the modular design manages complexity through functional specialization of each station.
Solution Approach 2:
Shower curtains or gas barriers serve as intermediary elements between processing stations, providing chemical isolation without requiring complex physical barriers. This intermediary approach simplifies the overall device structure while maintaining the necessary spatial separation for precise self-aligned feature formation and preventing chemistry cross-contamination.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables precise and self-aligned film deposition with minimal misalignment, improving device performance by preventing shorting and lateral growth, and enhancing throughput through spatial separation of incompatible gases.
Implementation Method 1
A substrate is moved to a deposition station to deposit a film on a surface of the substrate
Implementation Method 2
The substrate is moved to an anneal station to anneal the film on the substrate
Implementation Method 3
The substrate is moved to a treatment station to treat the annealed film with a plasma
Implementation Method 4
The substrate is moved to an etch station to selectively etch the film from the second substrate surface relative to the first substrate surface
Data Source
AI summary
Apparatus and methods to process one or more wafers are described. A substrate is exposed to a plurality of process stations to deposit, anneal, treat and optionally etch a film in small increments to provide self-aligned growth of the film on a substrate surface.