Semiconductor Doping Layout With Self-Aligned Hard Masks
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor manufacturing methods face challenges in accurately aligning doping regions, leading to misalignment errors and suboptimal performance in semiconductor structures, particularly in high-pressure, high-temperature, and high-frequency applications.
Innovation Solution
The use of patterned hard masks in a self-aligned manner to form doping regions through sequential implantation processes, ensuring precise alignment and reducing misalignment errors by using multiple patterned hard masks as shielding layers during ion implantation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional alignment methods are used for doping regions, then the manufacturing process is simpler, but alignment accuracy deteriorates leading to misalignment errors
Solution Approach 1:
The patent applies preliminary action by forming patterned hard masks before the doping implantation process. The hard masks are prepared in advance with precise patterns that define the desired doping region locations. This preliminary preparation ensures that when implantation occurs, the alignment is already established, preventing misalignment errors without requiring complex real-time adjustment mechanisms during the actual doping process.
Solution Approach 2:
The patent introduces patterned hard masks as intermediary elements between the doping source and the semiconductor substrate. These hard masks act as mediators that transfer the precise pattern information to the substrate during implantation. The hard masks shield and guide the ion beam, ensuring accurate placement of dopants in the intended regions while blocking unwanted areas, thus achieving high alignment accuracy through this intermediary structure.
2Manufacturing precision
If multiple implantation processes are performed to form overlapping doped regions, then doping precision is improved, but manufacturing time increases
Solution Approach 1:
The patent applies segmentation by dividing the doping process into multiple sequential implantation steps, each forming a specific doped region. The first implantation forms a first doped region, the second implantation forms a second doped region with overlap, and the third implantation forms a third doped region. This segmentation allows precise control over the doping profile and concentration distribution in different spatial zones, achieving high doping precision through controlled multi-step processing.
Solution Approach 2:
The patent implements the nested doll principle by creating overlapping doped regions where the second doped region partially overlaps with the first doped region, and the third doped region overlaps with the second. This nesting of doped regions allows multiple doping functions to be integrated in a compact spatial arrangement, achieving complex doping profiles through layered implantation processes that build upon each other's structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables accurate placement of doping regions, enhancing the performance of semiconductor structures by improving alignment accuracy and reducing manufacturing defects, making them suitable for high-voltage and high-frequency applications.
Implementation Method 1
performing a first implantation process using the first patterned hard mask to form a first doped region in the epitaxial layer; performing a second implantation process using the first patterned hard mask to form a second doped region in the epitaxial layer
Data Source
AI summary
Various methods for manufacturing semiconductor structures are provided. An embodiment method includes forming a first patterned hard mask on a protective layer that is on an epitaxial layer, which includes an opening exposing a portion of the protective layer and surrounded by side surfaces of the first patterned hard mask. A first doped region is formed in a portion of the epitaxial layer below the opening through the first patterned hard mask. A second patterned hard mask is formed on the side surfaces of the first patterned hard mask, through which a second doped region is formed in the portion of the epitaxial layer with the first doped region located along a sidewall of the second doped region. A third patterned hard mask is formed surrounding the second patterned hard mask, through which a third doped region is formed in the second doped region.