Self-Aligned Gate Contact Structure for Active Gate Layout Scaling
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Solution Overview
Problem
Conventional semiconductor manufacturing processes face challenges in scaling multi-gate transistors due to tight lithographic constraints and the need for precise registration of gate contacts, leading to inefficient use of layout space and potential shorting issues when contacting gate electrodes over active regions.
Innovation Solution
The development of gate contact structures that are self-aligned and formed directly over active portions of gate electrodes, eliminating the need for additional gate contact layers and reducing layout space by integrating trench contact vias and gate contact vias in the same layer, allowing direct contact from a metal interconnect layer without shorting to adjacent source or drain regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If gate contact structures are formed over active portions of gates using conventional processes, then contact to gate electrodes is achieved, but layout space is inefficiently used and registration precision requirements increase
Solution Approach 1:
The patent combines trench contact vias and gate contact vias into the same via structure, eliminating the need for separate gate contact layers and reducing layout space while maintaining reliable electrical contact to gate electrodes
Solution Approach 2:
The via structure automatically aligns with the gate electrode through self-aligned formation processes, eliminating the need for precise lithographic registration and reducing manufacturing complexity
2Productivity
If transistor dimensions are scaled down to increase device density, then capacity increases, but lithographic constraints and manufacturing complexity become overwhelming
Solution Approach 1:
The patent transitions from planar contact structures to three-dimensional via structures that extend through multiple layers, enabling compact routing and reduced lateral spacing between features while maintaining electrical functionality
Solution Approach 2:
The via structure is segmented into distinct functional regions including trench contact portions, gate contact portions, and interconnect portions, allowing independent optimization of each segment for its specific function while reducing overall complexity
Data Source
AI summary
Gate contact structures disposed over active portions of gates and methods of forming such gate contact structures are described. For example, a semiconductor structure includes a substrate having an active region and an isolation region. A gate structure has a portion disposed above the active region and a portion disposed above the isolation region of the substrate. Source and drain regions are disposed in the active region of the substrate, on either side of the portion of the gate structure disposed above the active region. A gate contact structure is disposed on the portion of the gate structure disposed above the active region of the substrate.