Self-Aligned Pattern Formation Using Cross-Linked Organic Films
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Solution Overview
Problem
Conventional self-aligned multiple patterning techniques face challenges in achieving high etching selectivity between inorganic films and silicon oxide sidewalls, leading to increased line edge roughness (LER) in pattern formation.
Innovation Solution
A pattern forming method involving the formation of stacked organic films, where a first organic film is coated with a cross-linkable polymer composition, infiltrated with an inorganic substance, and cross-linked, followed by the creation of a second organic film pattern and subsequent etching target film patterns using self-aligned patterning methods to reduce LER.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If an inorganic film is used as a base film and a silicon oxide film is used as a sidewall in self-aligned multiple patterning, then the pattern dimension can be reduced below the exposure critical dimension, but the etching selectivity between the base film and sidewall deteriorates, causing line edge roughness to increase
Solution Approach 1:
The patent applies composite materials by creating a stacked structure consisting of an organic film layer and an inorganic substance layer. The organic film provides etching resistance to oxygen plasma and dilute hydrofluoric acid, while the inorganic substance (silicon oxide) forms the sidewall structure. This composite structure resolves the contradiction by combining materials with complementary properties: the organic component ensures etching selectivity and resistance, while the inorganic component enables precise pattern formation below the exposure critical dimension through self-aligned patterning processes.
2Length of moving object
If the line width and space width of the line-and-space structure are adjusted to form a sidewall with smaller width, then the pattern dimension is reduced, but the etching selectivity between base film and sidewall becomes difficult to achieve
Solution Approach 1:
The patent applies local quality by assigning different functional properties to different layers of the stacked structure. The organic film layer is specifically designed to provide etching resistance and selectivity, while the inorganic substance layer is optimized for forming precise sidewalls with controlled width. This localized functional differentiation allows the sidewall width to be reduced while maintaining etching selectivity, as each layer performs its specialized function without compromising the other.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of patterns with reduced LER, allowing for smaller line widths than the exposure critical dimension of photolithography techniques while maintaining etching resistance to oxygen plasma and dilute hydrofluoric acid.
Implementation Method 1
cross-linking the polymer
Implementation Method 2
infiltrating an inorganic substance into the first organic film
Data Source
AI summary
A pattern forming method includes forming a first organic film by coating an etching target film with a composition including a polymer including a cross-linkable component, infiltrating an inorganic substance into the first organic film, cross-linking the polymer, forming a second organic film on the first organic film, forming a second organic film pattern by patterning the second organic film, forming a first organic film pattern having a pitch reduced to one-half of a pitch of the second organic film pattern by patterning the first organic film by a self-aligned patterning method that uses the second organic film pattern as a core pattern, forming an etching target film pattern having a pitch reduced to one-half of a pitch of the first organic film pattern by patterning the etching target film by a self-aligned patterning method that uses the first organic film pattern as a core pattern.