Self-Aligned Conductive Structure for Scaled Semiconductor Contacts

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Solution Overview

Problem

Existing semiconductor devices face challenges in achieving precise alignment and efficient manufacturing of conductive structures, leading to increased complexity and cost, particularly as device sizes shrink.

Innovation Solution

The semiconductor device incorporates a conductive structure with distinct first and second parts arranged along different directions, allowing for self-alignment with the semiconductor body, enhancing alignment accuracy and reducing manufacturing time and cost.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional alignment methods are used for conductive structures, then manufacturing process is simpler, but alignment accuracy deteriorates

Engineering Contradiction:
Improvealignment accuracyVSAvoidstructure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The conductive structure performs self-alignment by utilizing its own geometric features (first part and second part with different sizes in the third direction) to automatically position itself relative to the semiconductor body during manufacturing, eliminating the need for complex external alignment mechanisms and achieving high alignment accuracy

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The conductive structure is divided into two distinct parts (first part and second part) with different dimensions in the third direction, allowing each part to serve different functional purposes: the first part provides alignment reference while the second part provides contact area, thereby resolving the alignment accuracy versus structural complexity contradiction

Inventive Principle:
Principle #1Segmentation

2Quantity of substance

If device size is reduced to increase integration density, then integration level improves, but manufacturing precision deteriorates

Engineering Contradiction:
Improveintegration densityVSAvoidalignment precision
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

The invention utilizes the third direction (vertical dimension) to create size difference between the first part and second part of the conductive structure, allowing alignment information to be encoded in the vertical dimension while maintaining small planar dimensions for high integration density, thus preserving alignment precision at scaled device sizes

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Manufacturing precision

If complex alignment processes are used, then alignment accuracy improves, but manufacturing time increases

Engineering Contradiction:
Improvealignment accuracyVSAvoidmanufacturing efficiency
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The self-aligning conductive structure eliminates the need for complex external alignment processes by incorporating alignment functionality directly into the structure's geometry, significantly reducing manufacturing steps and time while maintaining high alignment accuracy

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The conductive structure is designed with pre-determined geometric relationships between its first part and second part that automatically establish correct positioning during the manufacturing process, eliminating the need for subsequent alignment adjustments and reducing overall manufacturing time

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS20250329645A1Semiconductor device, manufacturing method thereof, and memory system
Publication Date: 2025.10.23 YANGTZE MEMORY TECH CO LTD
  • US20250329645A1 patent drawing
  • US20250329645A1 patent drawing
  • US20250329645A1 patent drawing

AI summary

According to one aspect of the present disclosure, a semiconductor device is provided. The semiconductor device may include a semiconductor structure including a semiconductor body extending along a first direction. The semiconductor device may include a conductive structure located on a side of the semiconductor body along the first direction. The conductive structure may include a first part and a second part arranged along a second direction. The first part may be in contact with an end of the semiconductor body. A size of a portion of the first part close to the second part in a third direction may be different from a size of a portion of the second part close to the first part in the third direction. The second direction may intersect the third direction, and the first direction may be perpendicular to a plane formed by the second direction and the third direction.