Semiconductor Shielding Line Patterning for Dense Signal Routing
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Solution Overview
Problem
As semiconductor devices are scaled down, capacitive and inductive coupling between signal lines increases, leading to severe electromagnetic noise or crosstalk, which diminishes device performance.
Innovation Solution
A semiconductor device is manufactured with a shielding line between signal lines, connected to power or ground, and formed using a pitch multiplication process like self-aligned pitch doubling or self-aligned double patterning, to reduce electromagnetic noise and crosstalk.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If signal lines are scaled down to increase density, then device density is improved, but electromagnetic noise and crosstalk increase
Solution Approach 1:
A dummy signal line is introduced as an intermediary element between the first and second signal lines. This dummy line acts as a mediator that absorbs or redirects electromagnetic interference, preventing direct coupling between the adjacent signal lines. The dummy line is connected to ground through a via, providing a safe path for electromagnetic energy dissipation.
Solution Approach 2:
The patent converts the harmful electromagnetic coupling effect into a beneficial shielding effect by introducing the dummy line. The dummy line, when connected to ground, creates a controlled impedance path that actually reduces the overall crosstalk between signal lines by providing a reference potential and absorbing stray electromagnetic energy.
2Quantity of substance
If spacing between signal lines is reduced to increase density, then device density is improved, but capacitive and inductive coupling increase
Solution Approach 1:
The dummy signal line serves as a physical intermediary that increases the effective spacing between adjacent signal lines. By placing the dummy line between the first and second signal lines, the direct coupling path is interrupted, and the electromagnetic field distribution is modified to reduce both capacitive and inductive coupling effects.
3Object-affected harmful factors
If dummy line is added to reduce crosstalk, then electromagnetic noise is reduced, but device complexity increases
Solution Approach 1:
The dummy signal line is merged with the existing signal line patterning process. Both the real signal lines and the dummy shielding line are formed simultaneously using the same lithography and deposition steps, eliminating the need for separate processing stages. This merging approach adds minimal complexity to the overall manufacturing process.
Solution Approach 2:
The dummy line serves multiple functions: it acts as a shielding element to reduce crosstalk, maintains design rule compliance by occupying space between signal lines, and can potentially serve as a future signal line if needed. This multi-functionality reduces the need for additional dedicated shielding structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces electromagnetic noise and crosstalk between signal lines, enhancing device performance and overcoming lithography issues related to scaling, resulting in a denser memory array.
Implementation Method 1
By forming a dummy line between two signal lines (such as an aggressor line and a victim line) and connecting the dummy line to power or ground, electromagnetic noise or crosstalk between the signal lines may be reduced or prevented.
Implementation Method 2
the dummy line and the signal lines can be formed by a pitch multiplication process, such as a self-aligned pitch doubling technique or a self-aligned double patterning technique.
Data Source
AI summary
A method for manufacturing a semiconductor device is provided. The method includes disposing a mandrel layer on a dielectric layer and patterning the mandrel layer to form a first mandrel and a second mandrel spaced apart from the first mandrel. The minimum distance between the first mandrel and the second mandrel is equal to or less than about 90 nm. The method also includes etching the dielectric layer by using the first spacer, the second spacer, the third spacer, and the fourth spacer as etching masks to form a first dielectric element, a second dielectric element, a third dielectric element, and a fourth dielectric element. The method also includes forming a first shielding line between the second dielectric element and the third dielectric element.