Self-Aligned Via-to-Jumper Connections for Void-Free IC Power Delivery
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Solution Overview
Problem
Current technologies for forming vias and jumpers in integrated circuit (IC) devices suffer from defects such as voids at the via-jumper connection, leading to increased resistance and reduced power efficiency in the power delivery network.
Innovation Solution
The implementation of self-aligned via-to-jumper connections using a hybrid dielectric layer, which includes a dielectric liner and an additional dielectric liner with different dielectric materials, to achieve a good contact between the via and the jumper without major process changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional via and jumper formation processes are used, then manufacturing simplicity is maintained, but defects such as voids occur at the via-jumper connection leading to increased resistance
Solution Approach 1:
The dielectric layer is segmented into multiple portions with different dielectric constants. The first portion has a first dielectric constant and the second portion has a second dielectric constant that is different from the first. This segmentation allows optimization of the electric field distribution at the via-jumper connection interface, reducing void formation and improving connection reliability without requiring complex additional processing steps.
Solution Approach 2:
Different regions of the dielectric layer are assigned different dielectric constants to optimize local properties. The dielectric layer has a first portion with a first dielectric constant and a second portion with a second dielectric constant, creating local quality variations that improve the via-jumper connection by reducing stress and preventing void formation at critical interfaces.
2Productivity
If via and jumper dimensions are reduced for scaling, then device density increases, but maintaining good contact becomes more difficult
Solution Approach 1:
The dielectric constant parameter is changed across different portions of the dielectric layer. By having a first portion with a first dielectric constant and a second portion with a second dielectric constant, the electric field distribution is optimized to maintain good via-jumper contact even as dimensions are reduced for scaling, thereby supporting higher device density without sacrificing manufacturing precision.
3Loss of energy
If power delivery network resistance is reduced, then power efficiency improves, but requiring defect-free via-jumper connections which are difficult to achieve
Solution Approach 1:
The dielectric layer is constructed as a composite structure with multiple portions having different dielectric constants. This composite dielectric structure optimizes the electric field distribution and mechanical stress at the via-jumper interface, preventing void formation and ensuring defect-free connections, thereby reducing power delivery network resistance and improving power efficiency.
Data Source
AI summary
An IC device with one or more transistors may also include one or more vias and jumpers for delivering power to the transistors. For instance, a via may be coupled to a power plane. A jumper may be connected to the via and an electrode of a transistor. With the via and jumper, an electrical connection is built between the power plane and the electrode. The via may be self-aligned. The IC device may include a dielectric structure at a first side of the via. A portion of the jumper may be at a second side of the via. The second side opposes the first side. The dielectric structure and the portion of the jumper may be over another dielectric structure that has a different dielectric material from the dielectric structure. The via may be insulated from another electrode of the transistor, which may be coupled to a ground plane.