Self-aligned via interconnects using relaxed patterning exposure

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Solution Overview

Problem

Conventional via interconnect processes in integrated circuits face challenges due to small via size, high density, and alignment requirements, leading to increased costs and limitations in line-pattern density.

Innovation Solution

The implementation of self-aligned via interconnects using a 'generous via' pattern that allows for relaxed patterning exposure, where the via pattern is imprecise and indicates general areas for via formation, reducing the need for critical alignment and dimensional control, and is compatible with existing integrated circuit design and manufacturing processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional lithographic via patterning is used with precise alignment, then via placement accuracy is improved, but manufacturing complexity and cost increase

Engineering Contradiction:
Improvevia placement accuracyVSAvoidvia processing complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The via pattern automatically defines its own placement locations through the self-aligned via formation process. The imprecise via pattern serves as a guide for subsequent self-aligned processing steps, eliminating the need for separate alignment operations and complex lithographic patterning while maintaining accurate via placement.

Inventive Principle:
Principle #25Self-service

2Manufacturing precision

If conventional lithographic via patterning is used with precise alignment, then via placement accuracy is improved, but manufacturing cost increases

Engineering Contradiction:
Improvevia placement accuracyVSAvoidvia processing cost
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent uses an imprecise via pattern that does not require expensive, high-precision lithographic equipment. The pattern is intentionally designed with relaxed dimensional requirements, allowing the use of simpler, less costly patterning tools while still achieving the desired via placement through self-aligned processing.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

3Reliability

If minimum via spacing is increased for alignment tolerance, then alignment robustness is improved, but line-pattern density decreases

Engineering Contradiction:
Improvealignment robustnessVSAvoidline-pattern density
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent transitions from two-dimensional planar alignment to three-dimensional self-aligned via formation. By utilizing vertical layering and self-aligned processing, the system achieves robust via placement without being constrained by increased minimum spacing in the planar domain, thereby maintaining high line-pattern density.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS9209129B2Self-aligned via interconnect using relaxed patterning exposure
Publication Date: 2015.12.08 SYNOPSYS INC
  • US9209129B2 patent drawing
  • US9209129B2 patent drawing
  • US9209129B2 patent drawing

AI summary

Self-aligned via interconnects using relaxed patterning exposure. In accordance with a first method embodiment, a method for controlling a computer-aided design (CAD) system for designing physical features of an integrated circuit includes accessing a first pattern for first metal traces on a first metal layer, accessing a second pattern for second metal traces on a second metal layer, vertically adjacent to the first metal layer and accessing a precise pattern of intended interconnections between the first and second metal traces. The precise pattern of intended interconnections is operated on to form an imprecise via pattern that indicates a plurality of general areas in which vias are allowed. The imprecise via pattern is for use in an integrated circuit manufacturing process to form, in conjunction with operations to form the first and second metal layers, a plurality of self-aligned vias for interconnecting the intended interconnections.