Self-Assembled Pattern Forming Method with Recessed Guide
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing self-assembled pattern forming methods using block copolymers struggle to simultaneously produce both fine dot patterns and larger patterns on the same substrate, as the resolution limits of lithography devices hinder the miniaturization of dummy guide dots, and maintaining larger patterns while reducing the size of fine patterns is challenging.
Innovation Solution
A method involving the formation of a guide pattern with specific recessed parts on a substrate, followed by the application of brush films of a polymer A and subsequent self-assembly of a block copolymer A-B, which phase-separates into distinct structures within these recessed parts, allowing for the formation of both cylinder and lamellar structures, enabling miniaturization of fine patterns without compromising larger patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If lithography is used to produce dummy guide dots with small size, then the resolution limit of lithography device is reached, but the advantage of miniaturization by self-assembly cannot be sufficiently exhibited
Solution Approach 1:
The patent applies preliminary action by forming a polymer layer on the inner walls of recessed parts before filling with block copolymer. This pre-prepared polymer layer creates a controlled environment that guides the subsequent self-assembly process, enabling the formation of ultra-fine patterns that cannot be achieved by lithography alone. The polymer layer is deposited in advance to establish the structural framework needed for achieving sub-lithography resolution.
Solution Approach 2:
The patent uses a polymer layer as an intermediary substance between the recessed parts and the block copolymer. This polymer layer mediates the interaction by providing a controlled interface that facilitates the self-assembly of block copolymer into desired fine patterns. The intermediary polymer layer enables the transfer of structural information from the recessed parts to the final self-assembled pattern, achieving resolution beyond direct lithography capabilities.
2Manufacturing precision
If self-assembly is used to reduce pattern size, then fine dot pattern can be formed, but it is not easy to produce both fine dot pattern and larger pattern on the same substrate
Solution Approach 1:
The patent applies local quality by creating different types of recessed parts with different dimensions on the same substrate. Some recessed parts have dimensions that guide the formation of fine dot patterns, while others are designed to accommodate larger patterns. The polymer layer and block copolymer self-assembly process adapt to the local geometry of each recessed part, enabling simultaneous formation of both fine and large patterns on the same substrate with appropriate structural characteristics in each region.
Solution Approach 2:
The patent segments the substrate into multiple regions with different recessed part geometries. Each segment is designed with specific dimensional characteristics suited for its intended pattern type. The segmentation allows independent optimization of each region for its specific pattern requirements while using a unified self-assembly process across the entire substrate, achieving both fine dot patterns and larger patterns in different locations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the precise formation of both fine and wide patterns with reduced sizes, maintaining the structural integrity of larger patterns while achieving miniaturization of fine patterns, thereby overcoming the limitations of traditional lithography techniques.
Implementation Method 1
filling a first block copolymer; and phase-separating the first block copolymer
Implementation Method 2
forming a layer of a first polymer; filling a first block copolymer
Data Source
AI summary
A self-assembled pattern forming method in an embodiment includes: forming a guide pattern on a substrate; forming a layer of a first polymer; filling a first block copolymer; and phase-separating the first block copolymer. The guide pattern includes a first recessed part having a depth T and a diameter D smaller than the depth T, and a second recessed part having a width larger than double of the diameter D. The first block copolymer has the first polymer and a second polymer which are substantially the same in volume fraction. By phase-separating the first block copolymer, a cylinder structure and a lamellar structure are obtained.