Self-Assembly Patterning Process for Semiconductor Uniformity
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Solution Overview
Problem
Current self-assembly technologies face challenges in achieving uniformity and regularity in pattern formation for very large scale integrated circuits, particularly at dimensions of 30 nm or less, and are not suitable for fine patterning in semiconductor manufacturing.
Innovation Solution
A patterning process involving the formation of a silicon-containing film with a hydroxyl or carboxyl group substituted with an acid labile group, followed by high energy beam exposure, heat treatment, and self-assembly of a polymer film to create a microdomain structure, which is then transferred to the substrate using dry etching as a mask.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional self-assembly technology is used for pattern formation, then the process is simple, but the uniformity and regularity of the pattern are insufficient for very large scale integrated circuits
Solution Approach 1:
The patterning process is divided into multiple sequential steps: forming a silicon-containing film with acid-labile groups, selective removal of these groups to create a patterned underlayer, applying block copolymer, and heat treatment to induce self-assembly. This segmentation allows each step to be optimized independently, achieving high uniformity and regularity while maintaining overall process manageability
Solution Approach 2:
A silicon-containing film with acid-labile groups is formed in advance on the substrate before applying the block copolymer. This preliminary underlayer is selectively removed in exposed regions to create a patterned structure that guides subsequent self-assembly, ensuring high uniformity and regularity of the final pattern
2Manufacturing precision
If conventional lithography is used to achieve finer dimensions, then the resolution is sufficient, but the wavelength of exposure light must be shortened which increases cost and technical difficulty
Solution Approach 1:
The block copolymer performs self-assembly through heat treatment to form the final fine pattern without requiring additional lithography steps. The system uses its own internal structure (amphiphilic blocks) to spontaneously organize into uniform micelle patterns, achieving sub-10nm dimensions without needing shorter wavelength light sources or more complex lithography equipment
3Manufacturing precision
If block copolymer self-assembly is used for fine patterning, then the pattern uniformity improves, but the etching resistance of the resist film decreases
Solution Approach 1:
The silicon-containing film with acid-labile groups serves as an intermediary underlayer between the substrate and the block copolymer. This underlayer provides mechanical support and enhances etching resistance, while allowing the block copolymer to maintain its self-assembled uniform pattern. The underlayer is selectively removed only in exposed regions, preserving the pattern uniformity while providing the necessary structural strength
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This process enables the formation of patterns with excellent uniformity and regularity, suitable for fine patterning in semiconductor manufacturing, overcoming the limitations of conventional self-assembly methods.
Implementation Method 1
a silicon-containing film forming step in which a silicon-containing film is formed by application of a silicon-containing film composition containing a silicon-containing compound having a hydroxyl group or a carboxyl group which is substituted with an acid labile group
Implementation Method 2
the silicon-containing film is formed by heating
Implementation Method 3
a pattern-exposure step in which the silicon-containing film is pattern-exposed to a high energy beam
Implementation Method 4
a self-assembly step in which a polymer film is self-assembled to form a microdomain structure
Implementation Method 5
the polymer film is self-assembled by heat treatment to form a microdomain structure
Implementation Method 6
a pattern formation step in which a pattern is formed by dry etching of the polymer film having the microdomain formed; a pattern transfer step in which the pattern is transferred to the silicon-containing film by dry etching
Data Source
Figure 1A~1F
AI summary
The invention provides a patterning process which uses self-assembly, wherein the patterning process comprises: a step of forming a silicon-containing film by applying a silicon-containing film composition having an organic substituent group substituted with an acid labile group onto a substrate to be processed, a step of pattern-exposing of the silicon-containing film, a step of forming a polymer film by applying a self-assembling polymer onto the silicon-containing film, a step of self-assembling the polymer film to form a microdomain structure, a step of forming a pattern on the polymer film, a step of transferring the pattern to the silicon-containing film by using the pattern formed on the polymer as a mask, and a step of transferring the pattern to the substrate to be processed by using the pattern transferred to the silicon-containing film as a mask. There can be provided a pattern having a microdomain structure formed by self-assembly with excellent uniformity and regularity, the pattern having been difficult to be obtained by a conventional self-assembly polymer.