Self-Biased Level-Down Shifter for Low-Power Stable Data Transfer

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

As semiconductor memory devices become more integrated and high-capacity, their power consumption increases, necessitating efforts to reduce power consumption while maintaining stable data transmission across varying voltage levels.

Innovation Solution

A level-down shifter circuit with a self-biased structure, utilizing PMOS and NMOS transistors with thick gate oxide films, and a current source with a self-biased feedback mechanism to minimize duty cycle distortion and reduce power consumption by adjusting node voltages based on input signals and reference voltages.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If integration density and capacity of semiconductor memory devices are increased, then higher capacity is achieved, but power consumption increases

Engineering Contradiction:
Improveintegration densityVSAvoidpower consumption
Core Design Contradiction:
Quantity of substanceVSUse of energy by moving object

Solution Approach 1:

The patent changes the voltage level parameter from a first voltage level to a second voltage level using a level-down shifter circuit. This voltage transformation enables the memory device to operate at optimized voltage levels, reducing power consumption while maintaining the required integration density and capacity. The level-down shifter converts higher voltage input signals to lower voltage levels suitable for internal circuit operation.

Inventive Principle:
Principle #35Parameter changes

2Quantity of substance

If integration density increases, then more devices are integrated, but power consumption increases

Engineering Contradiction:
Improvenumber of semiconductor memory devicesVSAvoidpower consumption
Core Design Contradiction:
Quantity of substanceVSUse of energy by stationary object

Solution Approach 1:

The level-down shifter circuit transforms voltage parameters to enable efficient operation of integrated memory devices. By converting input signals from a first voltage level to a second voltage level, the circuit optimizes power consumption for the integrated devices while maintaining their operational capacity.

Inventive Principle:
Principle #35Parameter changes

3Use of energy by moving object

If voltage level transformation is performed, then power consumption is reduced, but duty cycle distortion may occur

Engineering Contradiction:
Improvepower consumptionVSAvoidduty cycle distortion
Core Design Contradiction:
Use of energy by moving objectVSReliability

Solution Approach 1:

The level-down shifter circuit incorporates feedback mechanisms to monitor and adjust the voltage transformation process. This feedback control minimizes duty cycle distortion by dynamically adjusting circuit parameters to maintain signal integrity during voltage level conversion, thereby reducing power consumption without compromising reliability.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The circuit employs self-biased structures where transistors automatically adjust their operating points based on the input signal characteristics. This self-service mechanism compensates for duty cycle distortion during voltage transformation, enabling power reduction while maintaining signal fidelity without requiring external control circuits.

Inventive Principle:
Principle #25Self-service

Data Source

PatentUS8829969B2Level-down shifter
Publication Date: 2014.09.09 SAMSUNG DISPLAY CO LTD
  • US8829969B2 patent drawing
  • US8829969B2 patent drawing
  • US8829969B2 patent drawing

AI summary

A level-down shifter includes: a first load device between a first voltage and a first node; a second load device between the first voltage and a second node; a first input device between the first node and a third node, receiving a reference voltage signal, and adjusting a first node voltage of the first node based on the reference voltage signal; a second input device between the second node and the third node, receiving an input signal, and adjusting a second node voltage of the second node based on the input signal; and a current source between a second voltage and the third node, receiving the second node voltage of the second node, and adjusting a third node voltage of the third node and a bias current based on the second node voltage of the second node, wherein a level of the input signal is higher than the first voltage.