Self-cooling semiconductor resistor and manufacturing method thereof

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing semiconductor resistor designs based on metal Peltier effect have a weak cooling effect and are incompatible with existing semiconductor CMOS processes, requiring additional cooling modes and complicating applications.

Innovation Solution

A self-cooling semiconductor resistor is developed, comprising multiple N-type and P-type wells in a semiconductor substrate, with polysilicon gates and metal interconnect layers forming an S-shaped structure, allowing for efficient heat dissipation without additional cooling modes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If metal Peltier effect is used for cooling, then cooling function is provided, but cooling effect is weak and compatibility with CMOS processes is poor

Engineering Contradiction:
Improvecooling effectVSAvoidcompatibility with CMOS processes
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent changes the material parameter from metal to semiconductor, and changes the physical effect parameter from Peltier effect to Seebeck effect. This allows the device to achieve strong cooling effect while being compatible with standard CMOS fabrication processes, as semiconductor materials and Seebeck effect are inherently compatible with CMOS technology

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent replaces the metal Peltier effect mechanism with a semiconductor Seebeck effect mechanism. This substitution enables the device to achieve both strong cooling performance and compatibility with semiconductor manufacturing processes, as the Seebeck effect is a fundamental property of semiconductor materials that can be integrated into CMOS processes

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Reliability

If additional cooling modes are added, then cooling function is enhanced, but device complexity increases

Engineering Contradiction:
Improvecooling functionVSAvoidcooling mode structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent enables the resistor to perform self-cooling by utilizing the Seebeck effect within the existing resistor structure. The temperature difference between source and drain regions generates voltage that drives current flow, which in turn creates Peltier cooling at the junctions. This self-service mechanism eliminates the need for external cooling systems or additional cooling modes, reducing device complexity while maintaining effective cooling function

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The patent makes the resistor serve multiple functions: it acts as both a resistive element and a cooling device. By utilizing the Seebeck effect and Peltier effect within the same structure, the device achieves both electrical resistance function and active cooling function, eliminating the need for separate cooling systems and reducing overall device complexity

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Productivity

If chip scale and speed increase, then performance is improved, but heat generation increases making dissipation more challenging

Engineering Contradiction:
Improvechip scale and speedVSAvoidheat dissipation difficulty
Core Design Contradiction:
ProductivityVSTemperature

Solution Approach 1:

The patent enables the resistor to perform self-cooling by utilizing the Seebeck effect within the existing resistor structure. The temperature difference between source and drain regions generates voltage that drives current flow, which in turn creates Peltier cooling at the junctions. This self-service mechanism eliminates the need for external cooling systems or additional cooling modes, reducing device complexity while maintaining effective cooling function

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The patent converts the harmful heat generation into a beneficial cooling effect. By utilizing the Seebeck effect, the temperature difference that represents harmful heat is converted into useful voltage generation. This voltage drives current that creates Peltier cooling at the junctions, transforming the heat problem into a cooling solution

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The self-cooling semiconductor resistor achieves improved process compatibility and cooling efficiency, reducing the working temperature of chips without increasing power consumption, thereby enhancing the reliability and safe operating range of chips.

Implementation Method 1

Peltier effect refers to a phenomenon of heat absorption and heat release at joints of different conductors when current flows through a loop composed of different conductors

Methodology Applied
Scientific EffectPeltier effect: Peltier Effect

Implementation Method 2

Taking advantage of the Seebeck effect, the resistor performs self-cooling when a temperature difference is generated between a source region and a drain region

Methodology Applied
Scientific EffectSeebeck effect: Seebeck Effect

Data Source

PatentUS12205863B2Self-cooling semiconductor resistor and manufacturing method thereof
Publication Date: 2025.01.21 MONTAGE TECHNOLOGY CO LTD
  • US12205863B2 patent drawing
  • US12205863B2 patent drawing
  • US12205863B2 patent drawing

AI summary

Self-cooling semiconductor resistor and manufacturing method thereof are provided. The resistor comprises: multiple N-type and P-type wells in a semiconductor substrate, first polysilicon gates on each N-type well, second polysilicon gates on each P-type well, and metal interconnect layers. The multiple N-type and P-type wells are arranged alternately in row and column direction, respectively. N-type and P-type deep doped regions are formed on each N-type and P-type well, respectively. The first and second polysilicon gates are N-type and P-type deep doped respectively, and there is no gate oxide layer between the first and second polysilicon gates and the semiconductor substrate. The metal interconnect layers connect the multiple first and second polysilicon gates as an S-shaped structure. In the present application, the flow direction of heat is from the inside of the resistor to its surface, thereby realizing heat dissipation and cooling.