Self-Powered Synaptic Transistor Using a Shared Triboelectric Layer
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Solution Overview
Problem
Existing bionic synaptic transistors require additional complex circuits and power supplies for stimulation acquisition, which hinders their application in flexible electronic devices, wearable devices, and bionic skins.
Innovation Solution
A friction nano power generation synaptic transistor is developed, integrating a friction nano generator and a synaptic transistor with a shared intermediate layer, allowing for self-driven operation without an external power supply.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If bionic synaptic transistor is integrated with stimulation acquisition end through extra complex circuit, then synaptic function is achieved, but device complexity increases and additional power supply is required
Solution Approach 1:
The patent merges the friction nano generator and synaptic transistor into a single integrated device. The shared intermediate layer serves dual purposes: as the dielectric layer of the synaptic transistor and as the intermediate layer of the friction nano generator. This integration eliminates the need for separate stimulation acquisition circuits and additional power supplies, directly resolving the technical contradiction between achieving synaptic function and reducing device complexity.
Solution Approach 2:
The shared intermediate layer performs multiple functions simultaneously: it acts as the dielectric layer for the synaptic transistor, the intermediate layer for the friction nano generator, and provides mechanical coupling between the friction layers. This multi-functionality reduces the overall device complexity while maintaining synaptic functionality.
2Reliability
If bionic synaptic transistor uses extra complex circuit and additional power supply, then synaptic characteristics are complete, but weight increases and flexibility decreases
Solution Approach 1:
By combining the friction nano generator and synaptic transistor into one integrated structure with shared components, the patent eliminates redundant materials and structures. The shared intermediate layer and electrode layer reduce overall device weight while maintaining complete synaptic characteristics.
3Reliability
If bionic synaptic transistor uses extra complex circuit and additional power supply, then synaptic function is achieved, but structural simplicity is lost
Solution Approach 1:
The patent integrates the friction nano generator and synaptic transistor into a unified structure where the shared intermediate layer and electrode layer serve both functions. This merging eliminates the need for separate circuits and power supplies, achieving synaptic function while maintaining structural simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integrated device is lightweight, flexible, and simple in structure, enabling bionic synaptic functions such as external stimulation response and energy generation, while eliminating the need for additional power supplies.
Implementation Method 1
In a case where the negative friction layer is rubbed by using a positive friction material or the positive friction layer is rubbed by using a negative friction material, the shared intermediate layer generates a pulse voltage
Implementation Method 2
the shared intermediate layer is used as a dielectric layer of the synaptic transistor and also as an intermediate layer of the friction nano generator
Data Source
AI summary
Provided is a friction nano power generation synaptic transistor. The friction nano power generation synaptic transistor includes a friction nano generator, a synaptic transistor, a substrate, an electrode layer formed on the substrate, a shared intermediate layer formed on the electrode layer; a synaptic transistor active layer, a source electrode, and a drain electrode which are formed on the shared intermediate layer; and a positive friction layer and a negative friction layer formed on the shared intermediate layer, where the shared intermediate layer is used as a dielectric layer of the synaptic transistor and an intermediate layer of the friction nano generator.