SEM-Based 3D Feature Profile Reconstruction Without TEM

Solution Overview

Problem

The high cost and time-consuming nature of using Transmission Electron Microscopy (TEM) for observing inner structures of materials necessitates a less expensive and efficient method for analyzing material structures at the sub-micron scale.

Innovation Solution

A method that utilizes scanning electron microscope (SEM) images to simulate 3D feature profiles by identifying inner and outer edges, defining a side edge region, generating a side edge model, and outputting a 3D feature profile, which reduces the reliance on TEM images.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If TEM is used to observe inner structures of materials, then measurement precision is improved, but cost and time consumption increase

Engineering Contradiction:

Improvemeasurement precisionVSAvoidtime consumption

Core Design Contradiction:

Measurement precisionVSLoss of time

Solution Approach 1:

The patent creates a 3D feature profile simulation (a copy) based on 2D SEM images instead of using actual TEM observation. The simulation model reproduces the internal structure information that would otherwise require TEM, thereby avoiding the time-consuming and expensive TEM process while maintaining measurement capability

Inventive Principle:

Principle #26Copying

Solution Approach 2:

The patent replaces the expensive and time-consuming TEM method with a cheaper alternative using SEM images and computational simulation. The SEM-based simulation approach provides a cost-effective substitute that achieves sufficient measurement precision for process judgment without the high overhead of TEM

Inventive Principle:

Principle #27Cheap short-living objects (Disposable)

2Measurement precision

If TEM is used to observe inner structures of materials, then measurement precision is improved, but fabrication cost increases

Engineering Contradiction:

Improvemeasurement precisionVSAvoidfabrication cost

Core Design Contradiction:

Measurement precisionVSEase of manufacture

Solution Approach 1:

The patent creates a 3D feature profile simulation (a copy) based on 2D SEM images instead of using actual TEM observation. The simulation model reproduces the internal structure information that would otherwise require TEM, thereby avoiding the time-consuming and expensive TEM process while maintaining measurement capability

Inventive Principle:

Principle #26Copying

Solution Approach 2:

The patent replaces the expensive and time-consuming TEM method with a cheaper alternative using SEM images and computational simulation. The SEM-based simulation approach provides a cost-effective substitute that achieves sufficient measurement precision for process judgment without the high overhead of TEM

Inventive Principle:

Principle #27Cheap short-living objects (Disposable)

3Ease of manufacture

If SEM image simulation method is used, then fabrication cost decreases, but measurement precision may be compromised

Engineering Contradiction:

Improvefabrication costVSAvoidmeasurement precision

Core Design Contradiction:

Ease of manufactureVSMeasurement precision

Solution Approach 1:

The patent transforms 2D SEM image data into a 3D feature profile simulation by introducing depth information through side edge modeling. This dimensional transformation allows the simulation to capture three-dimensional structural characteristics from two-dimensional images, improving measurement precision while maintaining cost effectiveness

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent changes the parameter representation from 2D coordinates to 3D coordinates by incorporating side edge profiles and depth information. The simulation model uses parameters such as side edge angles, feature depths, and layer thicknesses to reconstruct three-dimensional structures, thereby enhancing measurement precision without requiring TEM

Inventive Principle:

Principle #35Parameter changes

Data Source

PatentUS20230350381A1Method of simulating 3D feature profile by using SEM image

Publication Date: 2023.11.02 UNITED MICROELECTRONICS CORP

AI summary

A method of simulating a 3D feature profile by using a scanning electron microscope (SEM) image includes providing an SEM image. The SEM image includes a feature pattern within a material layer. The feature pattern includes an inner edge and an outer edge. The outer edge surrounds the inner edge. Then, the positions of the inner edge and the outer edge of the feature pattern are identified. Latter, a side edge region is defined based on the positions of the inner edge and the outer edge. Subsequently, a side edge model is generated automatically to simulate a profile of the feature pattern in the side edge region. Finally, a 3D feature profile is automatically output based on the position of the inner edge, the position of the outer edge, the thickness of the material layer and the side edge profile.