SEM Match Detection for Wafer Critical Dimension Deviation
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Solution Overview
Problem
Existing methods for detecting deviations between scanning electron microscope (SEM) apparatuses in semiconductor manufacturing are inefficient and cause instability in the manufacturing process due to hysteresis and low precision.
Innovation Solution
An apparatus match detection method using a new calibration and detection method (ABA) that measures critical dimensions on multiple target areas of a wafer using two SEM apparatuses, allowing for timely detection of measurement differences and deviations between the apparatuses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If existing detection methods are used to detect deviation between SEM apparatuses, then detection can be performed, but detection efficiency is low and hysteresis occurs
Solution Approach 1:
The wafer is divided into multiple target detection areas (first, second, third areas) with different detection unit configurations. The first area has M detection units, the second area has N detection units, and the third area has P detection units. This segmentation allows parallel detection across multiple regions, improving detection efficiency while eliminating hysteresis through simultaneous multi-point measurement.
2Measurement precision
If multiple detection areas with different unit counts are used, then detection precision is improved, but device complexity increases
Solution Approach 1:
The third target detection area serves multiple functions: it contains both the first target detection area (with M units) and the second target detection area (with N units), and additionally has P detection units. This multi-functional design allows the third area to be used for both comparative detection (against first and second areas) and absolute measurement, improving precision without requiring separate dedicated structures for each measurement type.
Data Source
AI summary
Embodiments of the present disclosure provide an apparatus match detection method, a detection system, a prewarning method and a prewarning system, the apparatus match detection method includes: providing a to-be-detected wafer, a first detection apparatus, and a second detection apparatus; measuring by the first detection apparatus a critical dimension of the first detection area to acquire a first detection result; measuring by the second detection apparatus a critical dimension of the third detection area to acquire a third detection result; measuring by the first detection apparatus a critical dimension of the second detection area to acquire a second detection result; acquiring a measurement difference between the first detection apparatus and the second detection apparatus based on the first detection result, the second detection result, and the third detection result; and acquiring a degree of deviation between the second detection apparatus and the first detection apparatus based on the measurement difference.