SEM Selective ROI Scanning for Faster Defect Inspection

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Solution Overview

Problem

Current semiconductor inspection methods face inefficiencies in throughput due to the need to scan large areas beyond regions of interest (ROIs), leading to increased overhead time and reduced advantages in high-resolution detection scans as ROI count and size decrease.

Innovation Solution

A selective scanning approach using a scanning electron microscope (SEM) that groups ROIs by size, employing a beam deflector to direct the electron beam precisely onto ROIs, aided by a processor that determines ROI locations and sizes, and utilizes deep learning segmentation or design images to optimize scanning patterns.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a low-resolution segmentation scan is performed to identify ROIs followed by a high-resolution detection scan on ROIs, then detection precision is improved, but productivity decreases due to image setup and deflection time overhead

Engineering Contradiction:
Improvedefect detection precisionVSAvoidinspection throughput
Core Design Contradiction:
Measurement precisionVSProductivity

Solution Approach 1:

The patent segments ROIs into size-based groups (small, medium, large) and processes each group with optimized scanning parameters. This segmentation allows the system to apply different scan strategies to different ROI categories, reducing overall processing time while maintaining detection precision for all ROI sizes.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent dynamically adjusts scanning parameters including pixel count, scan time, and beam deflection based on ROI size categories. The system transitions from static scanning approaches to dynamic parameter adjustment, where smaller ROIs receive fewer pixels and shorter scan times while larger ROIs receive more resources, optimizing the balance between precision and throughput.

Inventive Principle:
Principle #15Dynamics

2Measurement precision

If the high-resolution detection scan is performed on an area much larger than the ROI, then detection precision is maintained, but loss of time increases due to scanning unnecessary pixels

Engineering Contradiction:
Improvedefect detection precisionVSAvoidscanning time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent applies local quality by tailoring the scanning parameters specifically to each ROI size category rather than using a uniform approach for all ROIs. Small ROIs receive optimized scan patterns with fewer pixels, while larger ROIs receive more comprehensive scanning, ensuring each region is scanned with appropriate quality without wasting time on unnecessary pixels.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes scanning parameters (pixel count, scan time, beam deflection settings) based on ROI size categories. This parameter adaptation allows the system to reduce scanning time for small ROIs by using fewer pixels and shorter scan durations, while maintaining sufficient detection precision through appropriate parameter selection for each size category.

Inventive Principle:
Principle #35Parameter changes

3Measurement precision

If ROI count increases and ROI size decreases, then measurement precision requirements increase, but productivity advantages are reduced due to increased overhead time

Engineering Contradiction:
Improvesmall defect detection capabilityVSAvoidinspection throughput
Core Design Contradiction:
Measurement precisionVSProductivity

Solution Approach 1:

The patent segments the large number of small ROIs into manageable size-based groups, allowing efficient batch processing. By categorizing ROIs by size, the system can apply optimized scan patterns that are specifically tuned for small features, maintaining detection precision while reducing the per-ROI overhead time through efficient grouping and processing strategies.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies partial action by scanning only the necessary portion of each ROI with appropriate pixel density. For small ROIs, the system uses reduced pixel counts and shorter scan times that are sufficient for detection purposes, avoiding excessive scanning that would waste time without adding value to defect detection precision.

Inventive Principle:
Principle #16Partial or excessive action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method reduces processing time by 5 to 25 times by minimizing unnecessary scanning and improving throughput through precise targeting of ROIs, enhancing the efficiency of semiconductor inspection.

Implementation Method 1

an electron source configured to generate an electron beam

Methodology Applied
Scientific EffectElectron beam: Electron Beam

Implementation Method 2

a beam deflector disposed in the path of the electron beam between the electron source and the stage

Methodology Applied
Scientific EffectBeam deflection:

Implementation Method 3

a detector configured to receive electrons formed when the electron beam impacts the workpiece on the stage

Methodology Applied
Scientific EffectElectron impact:

Data Source

PatentUS20250253121A1Systems and methods of SEM inspection using selective scan approach
Publication Date: 2025.08.07 KLA CORP
  • US20250253121A1 patent drawing
  • US20250253121A1 patent drawing
  • US20250253121A1 patent drawing

AI summary

The system includes an electron source configured to generate an electron beam, a stage configured to hold a workpiece in the path of the electron beam, a beam deflector disposed in the path of the electron beam between the electron source and the stage, a detector configured to receive electrons formed when the electron beam impacts the workpiece on the stage, and a processor. The processor is configured to generate a workpiece image based on the electrons received by the detector, determine a size and location of each region of interest (ROI) of the workpiece, determine groups of ROIs having similar size, and send instructions to the beam deflector to direct the electron beam onto the location of each ROI and generate an ROI image for each group of ROIs.