Semi-Transparent Pattern for Sealant Curing in Display Devices

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Solution Overview

Problem

Conventional display devices face challenges in achieving a narrow border or borderless design due to the increased area required for peripheral regions to accommodate larger spacing between conductive wires and gate driver circuits, which conflicts with the need for high transmittance for sealant curing.

Innovation Solution

Incorporating a semi-transparent pattern on the second substrate that allows UV light to penetrate and cure the sealant from the side, reducing the spacing between peripheral conductive wires and minimizing the peripheral region area, while maintaining effective sealant curing and circuit functionality.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If the spacing between peripheral conductive wires is increased or mesh openings are added to achieve high transmittance for sealant curing, then the transmittance of the peripheral region is improved, but the area of the peripheral region has to be expanded

Engineering Contradiction:
Improvetransmittance of peripheral regionVSAvoidarea of peripheral region
Core Design Contradiction:
Illumination intensityVSArea of stationary object

Solution Approach 1:

Instead of irradiating the sealant from the array substrate side (where light must pass through the peripheral region), the patent inverts the approach by irradiating from the counter substrate side. This allows UV light to cure the sealant without requiring high transmittance through the peripheral conductive wires, thereby eliminating the need to expand the peripheral region area.

Inventive Principle:
Principle #13The other way round (Inversion)

Solution Approach 2:

The patent changes the dimension of light irradiation by introducing a semi-transparent pattern on the counter substrate that allows selective UV light transmission. This dimensional approach enables curing the sealant in specific areas without requiring the entire peripheral region to have high transmittance, thus reducing the overall peripheral region area needed.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If the area of the peripheral region is increased to accommodate GOA circuits or increase spacing between conductive wires, then the circuit functionality and manufacturability are improved, but the border width of the display device is increased

Engineering Contradiction:
Improvecircuit functionalityVSAvoidborder width
Core Design Contradiction:
ReliabilityVSLength of moving object

Solution Approach 1:

The patent inverts the conventional layout by placing GOA circuits in the active region rather than the peripheral region. This inversion allows the peripheral region to be minimized for narrow borders while the active region accommodates both pixel arrays and driver circuits, maintaining circuit functionality without increasing border width.

Inventive Principle:
Principle #13The other way round (Inversion)

Solution Approach 2:

The patent merges the functions of the active region and peripheral region by allowing GOA circuits to be disposed in the active region alongside pixel arrays. This combining of functions eliminates the need for a separate large peripheral region, thereby reducing border width while maintaining all necessary circuit functionalities.

Inventive Principle:
Principle #5Merging (Combining)

3Length of moving object

If the peripheral region area is reduced for narrow border design, then the border width is decreased, but the spacing between peripheral conductive wires is reduced making manufacturing more difficult

Engineering Contradiction:
Improveborder widthVSAvoidspacing between conductive wires
Core Design Contradiction:
Length of moving objectVSManufacturing precision

Solution Approach 1:

The patent inverts the lighting approach to cure sealant from the counter substrate side, which eliminates the requirement for large spacing between peripheral conductive wires. This allows the peripheral region to be minimized for narrow borders while maintaining manufacturability, as the conductive wires no longer need large spacing for UV light transmission.

Inventive Principle:
Principle #13The other way round (Inversion)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables a significant reduction in the peripheral region area, allowing for a narrow border or borderless design without compromising the sealant curing process or the reliability of the gate driver circuits under high temperature and humidity conditions.

Implementation Method 1

The sealant is a kind of UV curable material which has to be fully irradiated by UV light for generating adhesive effects

Methodology Applied
Scientific EffectUV light curing: Photopolymerisation

Implementation Method 2

a transmittance of the semi-transparent pattern is between 10% and 80%, and the semi-transparent pattern overlaps the sealant in the vertical direction

Methodology Applied
Scientific EffectLight transmission: Light

Data Source

PatentUS9513518B2Display device
Publication Date: 2016.12.06 AU OPTRONICS CORP
  • US9513518B2 patent drawing
  • US9513518B2 patent drawing
  • US9513518B2 patent drawing

AI summary

A display device includes a first substrate, a gate driver on array (GOA) circuit, a plurality of peripheral conductive wires, a second substrate, a sealant and a semi-transparent pattern. The GOA circuit is disposed in a gate driver region, and includes a plurality of thin film transistor devices. The peripheral conductive wires are disposed in a peripheral region of the first substrate, and the peripheral conductive wires are electrically connected to the GOA circuit. The sealant is disposed in at least a portion of the peripheral region and a portion of the gate driver region, and the sealant overlaps at least a portion of the peripheral conductive wires and a portion of the thin film transistor devices of the GOA circuit in a vertical direction. The semi-transparent pattern is disposed on the second substrate, and a transmittance of the semi-transparent pattern is between 10% and 80%.