Semiconductor Absorptive Layer for Near-Infrared Detection

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Solution Overview

Problem

Conventional radiation-emitting semiconductor devices emitting radiation in the near-infrared range have shortwave components perceptible to the human eye, and their detection is hindered by the declining sensitivity of silicon detectors for wavelengths above 850 nm.

Innovation Solution

A radiation-emitting semiconductor device with a semiconductor body featuring an active region generating near-infrared radiation and an integrated absorption region that absorbs shortwave radiation components with a cut-off wavelength shorter than the peak wavelength, preventing these components from being perceived by the human eye and ensuring detectability by conventional silicon detectors.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If the peak wavelength is shifted towards longer wavelengths to avoid visible radiation, then the radiation becomes imperceptible by the human eye, but the sensitivity of conventional silicon detectors declines

Engineering Contradiction:

Improvevisibility of radiation to human eyeVSAvoiddetection sensitivity of silicon detectors

Core Design Contradiction:

Object-affected harmful factorsVSMeasurement precision

Solution Approach 1:

The patent applies local quality by creating an absorption region with specific optical properties (high absorption for wavelengths below cut-off, low absorption for peak wavelength) within the semiconductor structure. This localized functional differentiation allows the device to selectively filter visible radiation while preserving near-infrared transmission for detection.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The invention uses composite material structure combining the active region (emitting near-infrared radiation) with an absorption region (filtering visible radiation). This composite approach enables simultaneous achievement of imperceptible radiation emission and maintainable detector sensitivity by integrating two materials with complementary optical properties.

Inventive Principle:

Principle #40Composite materials

2Object-affected harmful factors

If an absorption region is integrated into the semiconductor body to absorb shortwave radiation, then visible radiation components are suppressed, but the device structure becomes more complex

Engineering Contradiction:

Improvevisible radiation componentsVSAvoidsemiconductor structure complexity

Core Design Contradiction:

Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The patent merges the absorption function directly into the semiconductor body structure by integrating the absorption region with the active region in a unified semiconductor device. This consolidation eliminates the need for separate external filters or additional components, thereby suppressing visible radiation without proportionally increasing overall device complexity.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The absorption region serves multiple functions: it absorbs visible radiation to prevent human perception, protects the active region from visible light interference, and maintains electrical functionality. This multi-functionality reduces the need for separate components, offsetting the structural complexity with functional integration.

Inventive Principle:

Principle #6Universality (Multi-functionality)

3Reliability

If the absorption region is placed outside the current path, then it can be nominally undoped for optimal absorption, but the electrical contact structure becomes more complex

Engineering Contradiction:

Improveabsorption efficiency of absorption regionVSAvoidcontact structure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent segments the semiconductor device into functionally distinct regions: an active region for radiation generation, an absorption region for visible light filtering (placed outside the main current path), and contact regions for electrical connection. This segmentation allows each region to be optimized for its specific function while maintaining overall device functionality through strategic spatial arrangement.

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The absorption region effectively suppresses undesired radiation components in the visible spectral range, allowing for straightforward detection by silicon detectors without external filters, while maintaining efficient radiation emission in the near-infrared range.

Implementation Method 1

the absorption region at least partially absorbs a shortwave radiation component having a cut-off wavelength shorter than the peak wavelength

Methodology Applied

Scientific EffectAbsorption (EM radiation): Absorption (EM radiation)

Data Source

PatentUS9685584B2Light emitting semiconductor component including an absorptive layer

Publication Date: 2017.06.20 OSRAM OLED

AI summary

A radiation-emitting semiconductor device includes a semiconductor body with a semiconductor layer sequence, wherein the semiconductor layer sequence has an active region that generates radiation having a peak wavelength in the near-infrared spectral range and an absorptive region, and the absorption region at least partially absorbs a shortwave radiation component having a cut-off wavelength shorter than the peak wavelength.