Semiconductor Active Area Layers with Dopant Gradients
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving optimal dopant concentration gradients and layer thicknesses to control short channel effects, source/drain resistance, and contact resistance, leading to variations in device performance.
Innovation Solution
The method involves forming a semiconductor device with a composite structure comprising multiple channel layers and active area layers with specific dopant concentrations and gradients, grown using epitaxial techniques, to create a controlled dopant profile that reduces resistance and variation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single active area layer is used, then the device structure is simple, but the control over short channel effects and resistance is insufficient
Solution Approach 1:
The active area is divided into multiple layers (first active area layer, second active area layer, and third active area layer) with different dopant concentrations. This segmentation allows each layer to contribute differently to device performance, with the first layer providing baseline doping, the second layer enhancing short channel control through higher doping, and the third layer reducing contact resistance through highest doping concentration.
Solution Approach 2:
Different regions of the active area are assigned different dopant concentrations tailored to local requirements. The first active area layer has lower dopant concentration suitable for bulk properties, the second active area layer has intermediate concentration for channel control, and the third active area layer has highest concentration for contact resistance reduction. This local quality optimization resolves the contradiction by making the structure complex only where necessary.
2Manufacturing precision
If epitaxial growth is used to form multiple layers, then dopant concentration gradients are precisely controlled, but manufacturing complexity increases
Solution Approach 1:
The invention utilizes parameter changes during epitaxial growth, specifically varying the dopant concentration at different growth stages to form three distinct layers. By controlling doping parameters (dopant type, concentration, and introduction timing) during the epitaxial process, precise dopant concentration gradients are achieved. This approach balances manufacturing precision with ease of manufacture by using a single integrated epitaxial process rather than multiple separate doping steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances short channel control, reduces source/drain extension and spreading resistance, and minimizes local and global variations in dopant saturation and channel width, resulting in improved semiconductor device performance.
Implementation Method 1
The method involves forming a semiconductor device with a composite structure comprising multiple channel layers and active area layers with specific dopant concentrations and gradients, grown using epitaxial techniques
Data Source
AI summary
A semiconductor device and method of forming the same are described. A semiconductor device includes an active area adjacent a channel in a semiconductor composite. The active area includes a first active area layer having a first dopant concentration, a second active area layer having a second dopant concentration over the first active area layer, and a third active area layer having a third dopant concentration, over the second active area. The third dopant concentration is greater than the second dopant concentration, and the second dopant concentration is greater than the first dopant concentration. The channel includes a second channel layer comprising carbon over a first channel layer and a third channel layer over the second channel layer. The active area configuration improves drive current and reduces contact resistance, and the channel configuration increases short channel control, as compared to a semiconductor device without the active area and channel configuration.