Semiconductor Active Structure Edge Connection for Trench Gap-Fill
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Solution Overview
Problem
In highly integrated semiconductor devices, the formation of isolation layers using trench gap-fill methods is challenging due to void formation and material deposition issues when using flowable insulating materials, as the deposition speed varies within the trench, leading to incomplete filling and material runoff from edge portions.
Innovation Solution
The active structure of the semiconductor device involves connecting active regions to field regions at edge portions to prevent material runoff, allowing for effective gap-filling of trenches with flowable insulating materials like SOD or SOG, ensuring uniform deposition and improved trench gap-fill capability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If flowable insulating material is used to fill trenches, then trench gap-fill capability is improved, but material runs down from edge portions of field regions causing incomplete filling
Solution Approach 1:
The field region is segmented by introducing additional active regions that divide the continuous field region into separate sections. This segmentation prevents material runoff at the edges by creating discrete boundaries, allowing each trench to be filled independently without material flowing from adjacent edge portions.
Solution Approach 2:
Additional active regions are introduced as intermediary structures between existing active regions and field regions. These intermediary active regions act as barriers that prevent the flowable insulating material from running down the edges of field regions, thereby ensuring complete trench filling.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the gap-fill characteristic of trenches both at the center and edge portions, preventing material runoff and ensuring a complete and uniform isolation layer formation, even with the use of flowable insulating materials.
Implementation Method 1
a method of fully gap-filling the trench by using PSZ (polysilazane) having flow properties similar to those of water due to low viscosity in the SOD material
Implementation Method 2
PSZ (polysilazane) having flow properties similar to those of water due to low viscosity
Implementation Method 3
deposition material runs down from the edge portion of the field region
Data Source
AI summary
An active structure of a semiconductor device. In one aspect, the active structure of the semiconductor device includes first to (n)th field regions, and first to (n+1)th active regions formed alternately with the first to (n)th field regions, wherein one or more of the first to (n+1)th active regions are connected at edge portions thereof to close one or more of the field regions. In another aspect, the active structure of the semiconductor device includes first to (n)th field regions, and first to (n+1)th active regions formed alternately with the first to (n)th field regions, wherein the first and (n+1)th active regions are connected to (n+2)th and (n+3)th active regions at edge portions thereof, closing the field regions.