Semiconductor Active Pattern With Germanium Gradient
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Solution Overview
Problem
Semiconductor devices face challenges in achieving high reliability, high speed, and multifunctionalization due to increasing complexity and integration, which existing structures struggle to address effectively.
Innovation Solution
The semiconductor device incorporates an active pattern with a base portion and protrusion portions, featuring a specific geometric configuration of flat and curved pattern portions with varying germanium concentrations, and a manufacturing method involving alternating semiconductor layers, patterning, selective etching, and annealing to enhance current flow and alleviate short channel effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional active pattern structures are used, then manufacturing is simpler, but current flow is insufficient and short channel effects are severe
Solution Approach 1:
The active pattern is segmented into multiple distinct portions (first curved pattern portion, first flat pattern portion, second curved pattern portion) with different geometries and germanium concentrations. This segmentation allows each portion to contribute differently to current flow enhancement while managing short channel effects at various locations along the channel.
Solution Approach 2:
Different portions of the active pattern are assigned different local properties: the curved pattern portions have higher germanium concentrations to enhance current flow at critical regions, while the flat pattern portion has lower germanium concentration. This local quality variation optimizes electrical characteristics without requiring uniform complexity throughout the structure.
2Reliability
If germanium concentration is increased throughout the active pattern, then current flow improves, but manufacturing precision requirements increase
Solution Approach 1:
Instead of uniformly increasing germanium concentration throughout the active pattern, the invention applies higher germanium concentration locally to specific curved pattern portions where it provides the greatest benefit for current flow enhancement. The flat pattern portion maintains lower germanium concentration, reducing the overall manufacturing precision burden while still achieving improved electrical characteristics.
Solution Approach 2:
The active pattern is divided into segments with different germanium concentrations, allowing independent optimization of each segment. This segmentation enables targeted germanium doping in regions where it provides maximum benefit while avoiding the need for high precision control across the entire structure.
3Adaptability or versatility
If device integration is increased, then functionality improves, but short channel effects worsen
Solution Approach 1:
The invention addresses short channel effects through local quality variation in the active pattern structure. The curved pattern portions with higher germanium concentrations are strategically positioned to enhance current flow and mitigate short channel effects at critical locations, allowing high integration and functionality while maintaining reliability.
Solution Approach 2:
The active pattern transitions from a conventional two-dimensional planar structure to a three-dimensional structure with curved and flat portions at different levels. This dimensional change allows the pattern to extend vertically, increasing effective channel length and reducing short channel effects while maintaining compact footprint for high integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances current flow and reduces short channel effects, allowing for improved performance and integration while maintaining manufacturing tolerances, thus addressing the demands for high reliability and speed in semiconductor devices.
Implementation Method 1
performing an annealing process so that germanium in the first preliminary pattern portions is diffused into the second preliminary pattern portions
Data Source
AI summary
A semiconductor device including an active pattern, which has a base portion and a protrusion portion on the base portion, and a source/drain pattern provided on the base portion may be provided. The protrusion portion may include a first curved pattern portion, a first flat pattern portion disposed at a lower level than the first curved pattern portion, and a second curved pattern portion disposed at a lower level than the first flat pattern portion. Each of the first and second curved pattern portions has a curved side wall, and the first flat pattern portion has a flat side wall. The germanium concentration of the first curved pattern portion is a higher than the germanium concentration of the first flat pattern portion, and the germanium concentration of the first flat pattern portion is higher than the germanium concentration of the second curved pattern portion.