Semiconductor Active Pattern Sidewall Oxidation for Carrier Mobility
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Solution Overview
Problem
As semiconductor devices are miniaturized, their reliability decreases and production costs increase, posing challenges in manufacturing efficient and cost-effective semiconductor devices with improved electrical characteristics.
Innovation Solution
A method for manufacturing semiconductor devices involves forming a semiconductor layer with a first and second semiconductor material on a substrate, patterning it to create active patterns, oxidizing the sidewalls to form oxide layers, and removing the semiconductor pattern to create channel patterns with a high concentration of the second semiconductor material, which are then used to form gate electrodes and source/drain patterns to enhance carrier mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor devices are miniaturized to increase integration density, then the number of devices per unit area increases, but reliability decreases and production cost increases
Solution Approach 1:
The patent applies local quality by forming channel patterns with high concentration of second semiconductor material (e.g., germanium) specifically at critical locations (sidewalls of active patterns) while maintaining lower concentration in other regions. This localized material concentration improves carrier mobility and device reliability at miniaturized dimensions without requiring uniform high-cost processing across the entire wafer, thus resolving the contradiction between integration density and reliability.
Solution Approach 2:
The patent changes material concentration parameters by creating channel patterns with varying concentrations of second semiconductor material. The oxidation process selectively concentrates the second semiconductor material at sidewalls, creating high-concentration regions that enhance electrical characteristics. This parameter change allows improved reliability through material composition optimization rather than simply scaling device dimensions, addressing the reliability-cost issue.
2Reliability
If additional processing steps are added to form channel patterns with high concentration of second semiconductor material, then electrical characteristics improve, but manufacturing cost and process complexity increase
Solution Approach 1:
The patent merges the channel pattern formation process with the existing oxidation process used for sidewall spacer formation. By combining these two functions into a single oxidation step, the second semiconductor material is concentrated at sidewalls to form channel patterns without requiring separate deposition and patterning steps. This process integration improves electrical characteristics while avoiding additional manufacturing complexity.
Solution Approach 2:
The oxidation process is given multiple functions: it simultaneously forms sidewall oxide layers for spacer formation and concentrates the second semiconductor material to create channel patterns. This multi-functionality eliminates the need for separate channel pattern formation steps, improving electrical characteristics without increasing process complexity or manufacturing cost.
3Reliability
If the concentration of the second semiconductor material is increased in channel patterns, then carrier mobility and electrical characteristics improve, but manufacturing cost increases
Solution Approach 1:
The oxidation process automatically concentrates the second semiconductor material at the sidewalls of active patterns through self-diffusion mechanisms, creating high-concentration channel patterns without requiring additional material deposition or selective doping steps. This self-organizing process achieves high carrier mobility in channel regions while avoiding the cost of complex selective material introduction processes.
Solution Approach 2:
The patent replaces mechanical or chemical deposition methods with a thermal oxidation process to concentrate the second semiconductor material. Instead of using costly selective epitaxial growth or ion implantation to create high-concentration regions, the oxidation process thermally drives material redistribution, achieving the same effect through a simpler, more cost-effective thermal process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing costs and increases the integration density of semiconductor devices by forming channel patterns with high concentrations of the second semiconductor material without additional processing steps, improving electrical characteristics and reliability.
Implementation Method 1
oxidizing at least two sidewalls of the preliminary active pattern to form an oxide layer on each of the at least two sidewalls of the preliminary active pattern
Data Source
AI summary
A method for manufacturing a semiconductor device includes forming a semiconductor layer on a substrate, the semiconductor layer including a first semiconductor material and a second semiconductor material, patterning the semiconductor layer to form a preliminary active pattern, oxidizing at least two sidewalls of the preliminary active pattern to form an oxide layer on each of the at least two sidewalls of the preliminary active pattern, at least two upper patterns and a semiconductor pattern being formed in the preliminary active pattern when the oxide layers are formed, the semiconductor pattern being disposed between the at least two upper patterns, and removing the semiconductor pattern to form an active pattern, the active pattern including the at least two upper patterns. A concentration of the second semiconductor material in each of the at least two upper patterns is higher than a concentration of the second semiconductor material in the semiconductor pattern.