Semiconductor Active Pattern Stability via Dual Isolation Layers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As semiconductor devices become more highly integrated, the narrow width and reduced space between active regions lead to issues such as pattern collapse or incline, necessitating the development of effective methods for forming stable and reliable patterns with narrow widths and pitches.
Innovation Solution
The semiconductor device incorporates a plurality of active patterns and isolation layer patterns, where the first isolation layer patterns fill spaces between active patterns, supporting their sidewalls, and the second isolation layer patterns fill spaces between active and first isolation layer patterns, using insulating materials and specific deposition processes to maintain pattern stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If active regions are reduced in width and space for higher integration, then integration density is improved, but pattern stability deteriorates (collapse or incline occurs)
Solution Approach 1:
The patent introduces isolation layer patterns as intermediary structures between active patterns. These isolation layers act as mediators that provide mechanical support to the narrow active patterns, preventing their collapse or inclination while enabling higher integration density. The isolation layers fill spaces between active patterns and extend in the third direction to support sidewalls of active patterns.
Solution Approach 2:
The patent utilizes the third direction (vertical dimension perpendicular to the substrate) to solve the two-dimensional packing problem. By extending isolation layer patterns in the third direction to support the sidewalls of active patterns, the patent adds a vertical support mechanism that prevents pattern collapse without increasing the horizontal footprint, thereby enabling higher integration density.
2Reliability
If first isolation layer patterns are formed to support active patterns, then pattern stability is improved, but device complexity increases
Solution Approach 1:
The isolation layer patterns serve multiple functions simultaneously: they provide mechanical support to prevent active pattern collapse, provide electrical insulation between adjacent active patterns, and fill the spaces between patterns to enable higher integration density. This multi-functionality reduces the need for additional separate structures, thereby limiting the increase in device complexity.
3Reliability
If second isolation layer patterns are added to fill spaces, then electrical insulation is improved, but manufacturing complexity increases
Solution Approach 1:
The patent combines the formation of first and second isolation layer patterns into a unified manufacturing process. Both isolation layer patterns are formed using similar steps (etching, filling, planarization), and the process integrates smoothly with the existing active pattern formation. This merging of processes minimizes the increase in manufacturing complexity while achieving improved electrical insulation.
Data Source
AI summary
A semiconductor device including a plurality of active patterns, a plurality of first isolation layer patterns and a plurality of second isolation layer patterns may be provided. In particular, the active patterns may be arranged both in a first direction and in a second direction, and may protrude from a substrate and have a length in the first direction. The first isolation layer patterns may fill a first space, the first space provided between the active patterns and arranged in the first direction, and support two opposing sidewalls of neighboring active patterns. The second isolation layer patterns may fill a second space between the active patterns and the first isolation layer patterns. Accordingly, the active patterns of the semiconductor device may not collapse or incline because the first isolation layer patterns support the active patterns.