Semiconductor Device Active Region Alignment for Power Switching
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Solution Overview
Problem
Conventional semiconductor devices face variations in electrical characteristics due to design differences in the arrangement of active regions between power switching circuits and standard cells, leading to irregular operations and failure to achieve desired specifications.
Innovation Solution
The semiconductor device incorporates a power switching circuit with a first switching transistor and a buffer, where the arrangement of active regions in the buffer matches those in the standard cell, reducing variations by aligning their positions and sizes, and using a well tap region to manage potential supply and minimize power noise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If power switching circuit is disposed between power supply interconnect and interconnect for supplying VVdd power to transistors in logical circuits, then power consumption is reduced by switching off power supply when logical circuit does not need to operate, but variations of electrical characteristics occur in logical circuit in proximity of power switching circuit causing failure to achieve desired specifications
Solution Approach 1:
The patent applies local quality by creating a dedicated buffer region with specific active region arrangements that differ from the standard logical circuit regions. This buffer region is positioned locally between the power switching circuit and standard cells to provide localized electrical characteristic stabilization without affecting the overall power switching functionality. The buffer includes transistors with carefully designed active region geometries and doping profiles that are tailored to compensate for electrical variations in adjacent logical circuits.
Solution Approach 2:
The patent introduces a buffer circuit as an intermediary element between the power switching circuit and the standard logical circuits. This buffer acts as a mediator that isolates the standard cells from electrical variations caused by power switching operations. The buffer region contains transistors that are specifically designed to absorb or filter out electrical noise and variations, thereby protecting the logical circuits while maintaining the power-saving benefits of the switching circuit.
2Adaptability or versatility
If standard cell region is used for arranging various logical circuits and power switching circuits, then circuit functionality is achieved, but design differences in arrangement of active regions cause variations in electrical characteristics
Solution Approach 1:
The patent segments the standard cell region into distinct functional zones: a buffer region with specific active region arrangements for electrical stabilization, and standard logical circuit regions for computational functionality. This segmentation allows each zone to be optimized for its specific purpose while maintaining overall circuit integration. The buffer region is separated from standard cells by isolation structures, enabling independent design optimization without compromising manufacturing precision across the entire chip.
Solution Approach 2:
The patent implements local quality by giving the buffer region distinct structural characteristics compared to standard logical circuit regions. The buffer includes transistors with specifically designed active region arrangements, sizes, and doping profiles that are optimized for electrical stabilization rather than logical computation. This localized structural differentiation allows the buffer to compensate for electrical variations without requiring changes to the standard cell design, thereby maintaining manufacturing precision while preserving circuit versatility.
Data Source
AI summary
A semiconductor device includes a semiconductor substrate, a first standard cell including a first active region and a second active region, and a power switching circuit including a first switching transistor electrically connected between a first interconnect and a second interconnect over the semiconductor substrate, and including a first buffer connected to a gate of the first switching transistor, the first buffer including a third active region and a fourth active region, and wherein the first buffer adjoins, in a plan view, the first standard cell in a first direction, wherein an arrangement of the first active region matches an arrangement of the third active region in a second direction different from the first direction, and wherein an arrangement of the second active region matches an arrangement of the fourth active region in the second direction.