Semiconductor Active Region Overlap for Leakage Reduction
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Solution Overview
Problem
The increasing integration density of semiconductor devices leads to an increased hot electron induced punchthrough (HEIP) phenomenon in PMOS transistors, resulting in reduced channel length, increased leakage current, higher power consumption, lower operating velocity, and decreased breakdown voltage due to channel inversion.
Innovation Solution
A semiconductor device design featuring active regions with specific overlapping and spacing configurations, along with a device isolation film structure that includes multiple layers of liners and insulating films, and a gate structure with projecting portions to minimize electron trapping and enhance operating performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If integration density is increased, then device area is reduced, but hot electron induced punchthrough phenomenon increases causing leakage current to increase
Solution Approach 1:
The device isolation film is divided into multiple segments including a first device isolation film and a second device isolation film with different widths. This segmentation allows each isolation region to be optimized independently - the first isolation film has a narrower width to maintain integration density, while the second isolation film has a wider width to provide enhanced protection against hot electron induced punchthrough and leakage current
Solution Approach 2:
Different regions of the device are provided with different isolation film widths according to their specific functional requirements. The first device isolation film region uses a narrower width for area efficiency, while the second device isolation film region uses a wider width for superior electrical isolation and HEIP prevention, creating local quality variations that optimize both area utilization and leakage current suppression
2Speed
If channel length is reduced for higher integration, then operating velocity increases, but breakdown voltage decreases
Solution Approach 1:
The device isolation film is formed in advance during the fabrication process to establish proper electrical isolation between adjacent transistors before they operate. This preliminary isolation structure prevents hot electron accumulation and channel inversion that would otherwise occur in short-channel devices, thereby protecting the breakdown voltage while allowing the channel length to be reduced for higher operating velocity
Data Source
AI summary
A semiconductor device includes first and second active regions extending in a first direction on a substrate and spaced apart from each other in a second direction intersecting the first direction, wherein the first and second active regions overlaps with each other in the second direction, a third active region extending in the first direction on the substrate and spaced apart from the first active region in the second direction. The first active region is positioned between the second and third active regions in the second direction. The first and third active regions partially overlap in the second direction, and a device isolation film is configured to define the first to third active regions.