Semiconductor Performance Boosting via Adaptive Policy Feedback

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Solution Overview

Problem

Existing semiconductor devices face challenges in efficiently managing performance boosting while minimizing energy consumption, particularly in mobile devices where limited battery resources require optimal power management.

Innovation Solution

A method and semiconductor device that monitor user input and device usage to consecutively execute multiple boosting policies, adaptively determining performance levels based on feedback signals and energy consumption, thereby optimizing performance boosting while reducing power waste.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If performance boosting is applied to improve mobile device performance, then processing speed and responsiveness are improved, but energy consumption increases

Engineering Contradiction:
Improveprocessing speedVSAvoidenergy consumption
Core Design Contradiction:
ProductivityVSUse of energy by moving object

Solution Approach 1:

The patent implements dynamic performance boosting by continuously monitoring user inputs and device states, adjusting the boosting level in real-time. The processor dynamically transitions between different performance states based on actual usage patterns, ensuring high performance when needed while conserving energy during low-activity periods.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The system employs feedback mechanisms by monitoring user inputs, device usage patterns, and performance metrics to continuously adjust boosting policies. The processor analyzes feedback from previous boosting actions and modifies subsequent boosting decisions to optimize the balance between performance improvement and energy consumption.

Inventive Principle:
Principle #23Feedback

2Productivity

If aggressive performance boosting policies are executed to maximize performance, then productivity is improved, but energy waste increases

Engineering Contradiction:
Improveperformance outputVSAvoidenergy waste
Core Design Contradiction:
ProductivityVSLoss of energy

Solution Approach 1:

The patent applies partial boosting actions by executing multiple boosting policies with varying intensities rather than always applying maximum boosting. The system selectively applies boosting levels appropriate to the actual performance needs, avoiding excessive energy consumption while still achieving necessary performance targets.

Inventive Principle:
Principle #16Partial or excessive action

Solution Approach 2:

The system changes performance parameters dynamically by adjusting boosting levels based on monitored device states and user inputs. Multiple boosting policies with different parameter settings (boosting duration, intensity, trigger conditions) are executed sequentially to optimize performance output while minimizing energy waste.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS11442522B2Method of controlling performance boosting of semiconductor device based on at least user input and feedback from previous boosting policies and semiconductor device performing the method
Publication Date: 2022.09.13 SAMSUNG ELECTRONICS CO LTD
  • US11442522B2 patent drawing
  • US11442522B2 patent drawing
  • US11442522B2 patent drawing

AI summary

There is provided a method of controlling performance boosting of a semiconductor device. According to the method, input of a user is monitored. A performance of the semiconductor device is boosted by consecutively executing a plurality of boosting policies associated with a plurality of macros based on an input event associated with the input of the user and available energy during a boosting interval. Boosting level in each of the boosting policies may be adaptively determined based on the boosting level and the amount of usage of the semiconductor device used in the previous boosting policy and the boosting policies are consecutively executed. Accordingly, improved and/or optimal performance boosting can be provided to the semiconductor device and at the same time, a waste of power can be mitigated and/or prevented.