Semiconductor Component Additive Layer Doping Control

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Solution Overview

Problem

In semiconductor components, the injection layer often covers a larger surface area than necessary, leading to undesired doping effects in certain regions, which can result in reduced performance and increased cross-talk, particularly in compact geometries with close electrode separation.

Innovation Solution

A semiconductor component design featuring a molecular doping material injection layer with strategically formed regions of varying doping affinity, where an additive layer modifies the doping affinity of the molecular doping material, reducing lateral conductivity and preventing undesired doping effects, and an additive layer is applied on the injection layer side facing the electrode to inhibit doping in specific regions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the injection layer is formed over a larger surface area to improve charge carrier injection, then charge carrier injection is optimised, but undesired doping effects occur in certain regions leading to cross-talk and reduced performance

Engineering Contradiction:
Improvecharge carrier injectionVSAvoidundesired doping effects
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent applies local quality by creating regions with different doping affinities within the injection layer. The additive layer is selectively positioned to modify the doping affinity of the molecular doping material in specific regions, allowing high doping affinity in regions requiring charge carrier injection and low doping affinity in regions where undesired doping effects should be prevented. This spatial variation in doping affinity resolves the contradiction between optimising charge carrier injection and preventing cross-talk.

Inventive Principle:
Principle #3Local quality

2Object-generated harmful factors

If the injection layer is structured to prevent undesired doping effects, then cross-talk is reduced, but the structure becomes complex and manufacturing difficulty increases

Engineering Contradiction:
Improvecross-talkVSAvoidinjection layer structure
Core Design Contradiction:
Object-generated harmful factorsVSDevice complexity

Solution Approach 1:

The patent introduces an additive layer as an intermediary between the electrode and the molecular doping material. This additive layer acts as a mediator that modifies the doping affinity of the molecular doping material in specific regions without requiring complex structuring of the injection layer itself. The additive layer simplifies the overall device structure while still achieving the goal of preventing undesired doping effects and reducing cross-talk.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Ease of manufacture

If the injection layer covers a larger surface area to ensure complete coverage, then manufacturing is simplified, but lateral conductivity increases leading to cross-talk

Engineering Contradiction:
Improveinjection layer coverageVSAvoidsignal isolation
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent applies local quality by creating regions with different doping affinities within the injection layer. The additive layer is selectively positioned to modify the doping affinity of the molecular doping material in specific regions, allowing high doping affinity in regions requiring charge carrier injection and low doping affinity in regions where undesired doping effects should be prevented. This spatial variation in doping affinity resolves the contradiction between optimising charge carrier injection and preventing cross-talk.

Inventive Principle:
Principle #3Local quality

4Object-generated harmful factors

If the additive layer is applied to reduce doping affinity in certain regions, then cross-talk is reduced, but charge carrier injection efficiency may be compromised

Engineering Contradiction:
Improvecross-talkVSAvoidcharge carrier injection efficiency
Core Design Contradiction:
Object-generated harmful factorsVSReliability

Solution Approach 1:

The patent applies local quality by creating regions with different doping affinities within the injection layer. The additive layer is selectively positioned to modify the doping affinity of the molecular doping material in specific regions, allowing high doping affinity in regions requiring charge carrier injection and low doping affinity in regions where undesired doping effects should be prevented. This spatial variation in doping affinity resolves the contradiction between optimising charge carrier injection and preventing cross-talk.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design reduces lateral conductivity and cross-talk, enhances charge carrier injection efficiency, and allows for precise control of doping effects, particularly in compact geometries with tight electrode spacing, improving the performance of semiconductor components like organic transistors.

Implementation Method 1

an additive layer, which is arranged on the injection layer on the side of the injection layer facing towards the electrode, and consists of an additive material, which on contact with the molecular doping material and/or subsequent activation with the molecular doping material modifies its doping affinity with respect to the organic material of the organic semiconductor layer

Methodology Applied
Scientific EffectDoping affinity modification:

Data Source

PatentUS8764462B2Semiconductor component
Publication Date: 2014.07.01 NOVALED GMBH
  • US8764462B2 patent drawing
  • US8764462B2 patent drawing
  • US8764462B2 patent drawing

AI summary

The invention concerns a semiconductor component with a layered arrangement with an electrode, an organic semiconductor layer, an injection layer, and an additive layer, which consists of an additive, which on contact with the molecular doping material modifies its doping affinity with respect to the organic material of the organic semiconductor layer, wherein in the injection layer a layered region is formed with a first doping affinity of the molecular doping material with respect to the organic material and a further layered region is formed with a second, in comparison to the first doping affinity smaller, doping affinity of the molecular doping material with respect to the organic material. Furthermore the invention concerns a method for the manufacture of a semiconductor component and also the application of a semiconductor component.