Semiconductor Interface Additives for Etch-Stop Assembly Protection
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Solution Overview
Problem
The existing NAND architecture and fabrication methods face challenges in preventing over-etching and galvanic corrosion during the removal of semiconductor material, which can lead to exposure of metal-containing materials and subsequent corrosion.
Innovation Solution
Incorporating additives such as carbon, sulfur, nitrogen, and oxygen into the semiconductor material at specific concentrations to enhance resistance to etchants like hot phosphoric acid, thereby preventing over-etching and exposure of metal-containing materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If semiconductor material is removed during fabrication to form openings, then access to underlying structures is achieved, but over-etching occurs exposing metal-containing materials and causing galvanic corrosion
Solution Approach 1:
An etch-stop layer is formed over the metal-containing material before the opening formation process. This preliminary action creates a protective barrier that prevents the etchant from reaching and corroding the metal-containing material, even if the etching process continues beyond the intended depth.
Solution Approach 2:
The etch-stop layer acts as an intermediary between the semiconductor material and the metal-containing material. It provides a controlled interface that allows precise etching depth control while protecting the underlying metal-containing material from exposure and galvanic corrosion.
2Ease of manufacture
If conventional fabrication processes are used, then manufacturing simplicity is maintained, but galvanic corrosion occurs due to exposure of metal-containing materials
Solution Approach 1:
The etch-stop layer serves as a protective intermediary that prevents direct contact between the etchant and metal-containing material, thereby eliminating galvanic corrosion while adding minimal complexity to the fabrication process.
Solution Approach 2:
The etch-stop layer is applied in advance to counteract the harmful effect of galvanic corrosion. This preliminary protective measure ensures that even if etching conditions vary, the metal-containing material remains protected from corrosion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The incorporation of these additives significantly reduces the risk of over-etching and galvanic corrosion, ensuring the semiconductor material remains intact and preventing unwanted exposure of metal-containing materials during the fabrication process.
Implementation Method 1
the additive may reduce a rate of removal of such semiconductor material upon exposure to etchant (e.g., etchant comprising hot phosphoric acid)
Data Source
AI summary
Some embodiments include an integrated assembly having a first structure containing semiconductor material, and having a second structure contacting the first structure. The first structure has a composition along an interface with the second structure. The composition includes additive to a concentration within a range of from about 1018 atoms/cm3 to about 1021 atoms/cm3. The additive includes one or more of carbon, oxygen, nitrogen and sulfur. Some embodiments include methods of forming integrated assemblies.