Semiconductor Address Output Timing Control Circuit

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Solution Overview

Problem

Conventional semiconductor apparatus control circuits require a large number of flip-flops and latches to manage address output timing based on CAS latency, burst length, and CAS write latency, leading to increased circuit area, which worsens with advancements in semiconductor memory technology.

Innovation Solution

A control circuit with a timing signal generation unit that decodes operation specifications to generate timing signals for read and write commands, a storage control signal generation unit to manage storage signals, and an output control signal generation unit to adjust output signals, reducing the need for multiple flip-flops and latches by directly generating timing-adjusted addresses.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a conventional control circuit uses multiple flip-flops and latches to control address output timing according to CAS latency, burst length, and CAS write latency, then the timing control precision is improved, but the circuit area increases

Engineering Contradiction:
Improvetiming control precisionVSAvoidcircuit area
Core Design Contradiction:
Measurement precisionVSArea of stationary object

Solution Approach 1:

The patent combines multiple separate timing control paths (read command path and write command path) into a unified timing control structure. By merging the functionality of multiple flip-flops and latches into integrated timing control units that share common resources, the circuit achieves the required timing precision for both read and write operations while significantly reducing the overall circuit area.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent designs timing control units that can universally handle both read commands and write commands with different timing requirements. The control circuit uses multi-functional timing generation logic that can adapt to various CAS latency values, burst lengths, and CAS write latency values, eliminating the need for separate dedicated circuits for each function and thereby reducing circuit area while maintaining timing precision.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Adaptability or versatility

If the CAS latency, burst length, and CAS write latency values increase with technological advancement, then the memory operation specifications are improved, but the required circuit area increases proportionally

Engineering Contradiction:
Improvememory operation specificationsVSAvoidcircuit area
Core Design Contradiction:
Adaptability or versatilityVSArea of stationary object

Solution Approach 1:

The patent implements dynamic timing control where the timing parameters (CAS latency, burst length, CAS write latency) can be dynamically adjusted based on the specific operation mode and performance requirements. The control circuit uses programmable delay elements and configurable timing logic that can adapt to different latency values without requiring proportional increases in circuit area, allowing the system to optimize timing for various memory operation specifications.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes the approach from using fixed numbers of flip-flops and latches to using programmable timing control where the timing parameters can be modified through control signals. By using parameter-based timing control (where timing is determined by controllable parameters rather than fixed hardware structures), the circuit can accommodate increasing CAS latency, burst length, and CAS write latency values without a proportional increase in circuit area.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS8406079B2Address output timing control circuit of semiconductor apparatus
Publication Date: 2013.03.26 SK HYNIX INC
  • US8406079B2 patent drawing
  • US8406079B2 patent drawing
  • US8406079B2 patent drawing

AI summary

Various embodiments of a control circuit for controlling an address output timing of a semiconductor device are disclosed. In one exemplary embodiment, the circuit may include: a timing signal generation unit configured to decode operation specification information of a semiconductor device and generate a timing signal by delaying a read command or a write command based on a decoding result of the operation specification information; a storage control signal generation unit configured to generate a storage control signal in response to the read command or the write command; an output control signal generation unit configured to generate an output control signal in response to the timing signal; and a storage/output unit configured to store an address in response to the storage control signal, and output the stored address as a timing-adjusted address in response to the output control signal.