Semiconductor Adhesion Using Pressure Relaxation Layer
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Solution Overview
Problem
The integration of light emitting and detecting elements in semiconductor devices often results in inaccurate light output measurements due to the detection of spontaneous emission, and conventional methods to mitigate this, such as using a control layer, suffer from low precision and yield issues during the adhesion process, leading to potential defects like cracks.
Innovation Solution
A pressure relaxation layer with a semiconductor part having projections and recesses filled with a resin part is used between the light emitting and detecting elements, allowing for controlled pressure application during adhesion, which reduces the risk of defects and enhances adhesion quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If pressure is increased to improve adhesion between the light emitting element and the light detecting element, then adhesion quality is improved, but there is a possibility that a defect such as a crack occurs in the elements
Solution Approach 1:
A resin layer is provided between the light emitting element and the light detecting element before adhesion. This resin layer acts as a cushioning layer that absorbs excessive pressure during the adhesion process, preventing cracks and defects while still allowing sufficient adhesion to occur. The cushioning effect resolves the contradiction by enabling high adhesion quality without causing element damage.
2Device complexity
If the light emitting element and the light detecting element are formed integrally, then the number of parts is reduced and alignment precision is improved, but the light detecting element detects spontaneous emission light in addition to stimulated emission light, reducing measurement precision
Solution Approach 1:
The invention extracts and removes spontaneous emission light from the detection path by using the resin layer with specific optical properties. The resin layer is designed to absorb or filter out spontaneous emission wavelengths while allowing stimulated emission light to pass through to the light detecting element. This selective extraction resolves the contradiction by maintaining integral formation benefits while eliminating the harmful spontaneous emission detection.
3Measurement precision
If a control layer is provided to interrupt spontaneous emission light, then light detection precision is improved, but the reflectance of the oxidized semiconductor material is not sufficiently high, making it difficult to lower the spontaneous emission light detection level
Solution Approach 1:
The invention uses a composite structure combining a resin layer with specific optical absorption characteristics instead of relying solely on oxidized semiconductor material. The resin layer is formulated to have high absorption coefficients for spontaneous emission wavelengths, providing superior blocking effectiveness compared to conventional control layers. This composite material approach resolves the contradiction by achieving both high detection precision and reliable spontaneous emission light interruption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces the occurrence of defects like cracks during adhesion and improves light detection precision by efficiently reflecting spontaneous emission, leading to higher yield and reliability in semiconductor devices.
Implementation Method 1
a pressure relaxation layer with a semiconductor part having projections and recesses filled with a resin part is used between the light emitting and detecting elements, allowing for controlled pressure application during adhesion
Implementation Method 2
efficiently reflecting spontaneous emission light by the metal part having high reflectance
Data Source
AI summary
The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. The semiconductor device includes a first element and a second element adhered to each other. At least one of the first and second elements has a pressure relaxation layer on the side facing the other of the first and second elements, and the pressure relaxation layer includes a semiconductor part having a projection/recess part including a projection projected toward the other element, and a resin part filled in a recess in the projection/recess part.