Semiconductor Adhesive Layer Density Control

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Solution Overview

Problem

Existing wafer bonding technologies in 3D chip technology face issues with insufficient bonding strength, leading to defects and metal diffusion at the bonding interface, which affects the yield and performance of semiconductor products.

Innovation Solution

A semiconductor structure is developed with a first substrate having a high-density adhesive layer and a lower-density bonding layer, where the bonding layer includes dielectric materials with carbon, and the adhesive layer is enhanced through plasma bombardment to improve bonding strength and prevent metal diffusion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a bonding film made of silicon oxide and/or silicon nitride is used, then wafer bonding can be realized, but the bonding strength is insufficient leading to defects

Engineering Contradiction:

Improvebonding strengthVSAvoiddefect rate

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent changes the density parameter of the adhesive layer by using plasma bombardment to remove hydrogen bonds, transforming the material from a low-density state to a high-density state. This parameter change directly addresses the insufficient bonding strength while maintaining manufacturing precision.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite structure with two distinct layers: a high-density adhesive layer (silicon oxide or silicon nitride) and a lower-density bonding layer (carbon-containing dielectric material). This composite approach allows each layer to perform its specific function optimally, resolving the contradiction between bonding strength and defect rate.

Inventive Principle:

Principle #40Composite materials

2Ease of manufacture

If metal connection structure is formed in the bonding film, then electrical connection is achieved, but metal diffusion occurs at the bonding interface

Engineering Contradiction:

Improvemetal connection formationVSAvoidmetal diffusion

Core Design Contradiction:

Ease of manufactureVSObject-affected harmful factors

Solution Approach 1:

The high-density adhesive layer serves as an intermediary barrier between the metal connection structures and the bonding interface. This intermediate layer prevents direct contact and diffusion between metal atoms across the bonding interface, while still allowing the metal connection to be formed and function electrically.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The composite structure with the high-density adhesive layer provides a diffusion barrier that prevents metal diffusion, while the lower-density bonding layer maintains the necessary electrical connection properties. This material composition resolves the contradiction between ease of manufacture and prevention of harmful diffusion.

Inventive Principle:

Principle #40Composite materials

3Reliability

If plasma bombardment is performed on the adhesive layer, then density and bonding strength are improved, but process complexity increases

Engineering Contradiction:

Improvebonding strengthVSAvoidprocess steps

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent replaces conventional chemical deposition processes with plasma bombardment (ion beam processing) to densify the adhesive layer. This substitution uses physical ion impact rather than chemical reactions, achieving higher density and bonding strength in a single step that can be integrated into existing semiconductor fabrication processes.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The enhanced adhesive layer increases the bonding force between the layers, reducing metal diffusion at the interface and improving the overall performance and yield of semiconductor structures.

Implementation Method 1

performing a plasma bombardment process to the first adhesive layer, so as to enhance a density of the first adhesive layer

Methodology Applied

Scientific EffectPlasma bombardment: Plasma

Implementation Method 2

a nitrogen plasma is used for bombarding to decrease hydrogen bonds of the first adhesive layer

Methodology Applied

Scientific EffectHydrogen bond removal:

Implementation Method 3

the bonding surface has greater bonding force, so as to block the diffusion of metal material at the bonding interface

Methodology Applied

Scientific EffectDiffusion barrier: Diffusion Barrier

Data Source

PatentUS10811380B2Semiconductor structure and forming method thereof

Publication Date: 2020.10.20 YANGTZE MEMORY TECH CO LTD

AI summary

The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a first substrate; a first adhesive layer disposed on a surface of the first substrate; and a first bonding layer disposed on a surface of the first adhesive layer. A density of the first adhesive layer is greater than a density of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and first bonding layer, such that it is advantageous to improve a performance of the semiconductor structure.