Semiconductor Conductive Layer Air Gap Design
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Solution Overview
Problem
The increasing complexity and miniaturization of semiconductor devices lead to challenges in maintaining reliability due to defects such as outgassing, which can damage surrounding insulating layers and cause short circuits, particularly in the formation of seams within conductive layers.
Innovation Solution
A semiconductor device design that incorporates an air gap within the conductive layer, open to the upper surface and extending towards the substrate, is used to prevent defects by allowing gas escape and reducing the risk of damage to insulating layers, with a conductive layer connected to the substrate and contact plugs on both sides of the air gap.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a conductive layer is formed in a semiconductor device with increasing miniaturization and integration, then the degree of integration is improved, but defects such as outgassing and seam formation occur which damage insulating layers and cause short circuits
Solution Approach 1:
The conductive layer is divided into multiple segments separated by air gaps. This segmentation prevents continuous outgassing paths and reduces the formation of seams that could cause short circuits, while still maintaining electrical connectivity through the segmented structure.
Solution Approach 2:
Air gaps are introduced as intermediary spaces within the conductive layer structure. These air gaps act as mediators that allow controlled outgassing and prevent pressure buildup, thereby protecting the insulating layers from damage while maintaining the overall device integration.
2Stability of the object's composition
If the conductive layer is made continuous to ensure electrical connectivity, then electrical connection stability is improved, but outgassing causes damage to surrounding insulating layers
Solution Approach 1:
The continuous conductive layer is segmented into discrete sections separated by air gaps. This segmentation maintains electrical connectivity through each segment while preventing uncontrolled outgassing that could damage surrounding insulating layers.
Solution Approach 2:
The air gaps, which initially seem to disrupt the conductive layer, are converted into beneficial features that provide controlled outgassing pathways. This transforms the harmful outgassing effect into a beneficial pressure relief mechanism that protects the device.
3Reliability
If air gaps are introduced in the conductive layer to prevent outgassing damage, then reliability is improved, but the conductive layer structure becomes more complex
Solution Approach 1:
Air gaps are introduced in the vertical dimension within the conductive layer structure rather than complicating the horizontal layout. This dimensional approach maintains manufacturing simplicity while effectively preventing outgassing damage through strategically positioned void spaces.
Data Source
AI summary
A semiconductor device includes a substrate, gate electrodes and interlayer insulating layers alternately stacked on the substrate, channel regions penetrating through the gate electrodes and the interlayer insulating layers, a conductive layer penetrating through the gate electrodes and the interlayer insulating layers, an insulating layer covering an upper surface of the conductive layer, a contact plug penetrating through the insulating layer and connected to the conductive layer, and an air gap formed in the conductive layer. The conductive layer is connected to the substrate and extends between two groups of the channel regions. The air gap is defined by the contact plug, insulating layer and an inner sidewall of the conductive layer.