Semiconductor Air Gap Structure for Signal Delay Reduction
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Solution Overview
Problem
As semiconductor devices become highly integrated, the narrow distance between wiring layers and high dielectric constant of insulating layers lead to increased capacitance, causing signal delays and degradation of device characteristics.
Innovation Solution
A semiconductor device is designed with a protruding structure, a porous film on its side and upper surfaces, and an air gap between the protruding structure and the porous film, which reduces capacitance by incorporating a low dielectric constant material, such as air, within the gap.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a high dielectric constant insulating layer is used between wiring layers, then the capacitance between wiring layers increases, but signal delay occurs and device characteristics are degraded
Solution Approach 1:
The patent introduces an air gap structure between the protruding structure and the porous film, utilizing air (a porous material with extremely low dielectric constant) to reduce capacitance. The air gap is formed by removing the porous film in a specific region, creating a void space that lowers the dielectric constant in the critical area between wiring layers, thereby reducing signal delay and improving device characteristics.
Solution Approach 2:
The patent changes the dielectric constant parameter by introducing an air gap with a dielectric constant of approximately 1, compared to the surrounding insulating materials with higher dielectric constants. This parameter change in the local region reduces the overall capacitance between wiring layers, addressing the signal delay issue while maintaining the benefits of high dielectric constant materials in other regions.
2Productivity
If the distance between wiring layers is narrowed for high integration, then device integration increases, but capacitance between wiring layers increases causing signal delay
Solution Approach 1:
The patent applies local quality by creating a non-uniform structure where an air gap is introduced only in specific regions between wiring layers, while other regions maintain the original insulating layer structure. This localized modification reduces capacitance in critical areas without compromising the overall high integration density, allowing narrow wiring layer distances to be maintained while mitigating signal delay in key signal paths.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The air gap effectively lowers the capacitance between semiconductor elements, improving the electrical characteristics of the device by reducing signal delays and enhancing performance.
Implementation Method 1
An insulating layer used between wiring layers may have a high dielectric constant. The capacitance between the wiring layers can be increased due to the high dielectric constant of the insulating layer.
Data Source
AI summary
A semiconductor device includes a base substrate, a protruding structure on the base substrate, a porous film on a side surface and an upper surface of the protruding structure, and an air gap between at least a part of the side surface of the protruding structure and the porous film.