Semiconductor Air Gap Formation Using Ion-Modified Sacrificial Layers
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Solution Overview
Problem
Existing methods for forming air gaps in semiconductor devices struggle to create voids with desired shapes and sizes due to damage from subsequent processes like etching or cleaning, which affects the relative dielectric constant and maintains the air gap's integrity.
Innovation Solution
A method involving the stacking of a thermally-decomposable organic material in a recess on a substrate, followed by ion implantation to create a modified layer, and subsequent heating to desorb the organic material through this layer, forming an air gap with a predetermined shape.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a void is formed in a recess to create an air gap, then the relative dielectric constant is reduced, but the void causes defective embedding and the air gap integrity is compromised by subsequent etching or cleaning processes
Solution Approach 1:
The patent applies preliminary action by forming a protective film on the void surface before subsequent etching or cleaning processes. This protective film is formed in advance to prevent damage to the void structure, ensuring the air gap maintains its intended shape and integrity throughout manufacturing processes.
Solution Approach 2:
The protective film acts as an intermediary layer between the void and the harsh etching or cleaning environments. This intermediate structure protects the vulnerable void surface from direct exposure to damaging processes, allowing the air gap to be formed with precise shape control while maintaining integrity during manufacturing.
2Productivity
If subsequent etching or cleaning processes are performed to complete device fabrication, then device manufacturing is completed, but the air gap shape is damaged and relative dielectric constant is affected
Solution Approach 1:
The protective film is formed preliminarily before etching or cleaning processes to ensure the air gap survives subsequent manufacturing steps. This preliminary protection enables complete device fabrication while preserving air gap shape precision.
Solution Approach 2:
The patent converts the potentially harmful effect of etching or cleaning processes into a beneficial outcome by using the protective film to shield the air gap. The same processes that could damage the air gap are instead used to complete device fabrication, with the protective film ensuring the air gap emerges intact and precisely shaped.
3Ease of manufacture
If no protective measure is taken, then the manufacturing process is simpler, but the air gap cannot maintain its shape and integrity through subsequent processes
Solution Approach 1:
The protective film formation is a relatively simple preliminary step that enables the air gap to survive subsequent complex manufacturing processes. This single additional step provides disproportionate value by ensuring air gap integrity throughout fabrication.
Solution Approach 2:
The protective film serves as beforehand cushioning for the vulnerable air gap structure. This prior protection layer absorbs or deflects potential damage from subsequent processes, ensuring the air gap maintains its integrity without significantly complicating the overall manufacturing流程.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively forms air gaps with consistent shapes, enhancing the semiconductor device's performance by maintaining the air gap's integrity and achieving the desired relative dielectric constant.
Implementation Method 1
implanting ions into a surface of the organic material stacked in the recess so as to modify the surface of the organic material and form a modified layer on the surface of the organic material
Implementation Method 2
heating the substrate to a first temperature so as to thermally decompose the organic material under the modified layer
Implementation Method 3
desorb the organic material through the modified layer so that an air gap is formed between the modified layer and the recess
Data Source
AI summary
A method of manufacturing a semiconductor device, includes: stacking a thermally-decomposable organic material on a surface of a substrate in which a recess is formed; implanting ions into a surface of the organic material stacked in the recess so as to modify the surface of the organic material and form a modified layer on the surface of the organic material; and heating the substrate to a first temperature so as to thermally decompose the organic material under the modified layer and to desorb the organic material through the modified layer so that an air gap is formed between the modified layer and the recess.