Air-Gap Formation in Semiconductor Recesses Without Voids or Seams
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Solution Overview
Problem
Existing semiconductor manufacturing methods face challenges in forming a cavity with a desired shape in a recess due to the formation of voids and seams in the organic film, which can affect the parasitic capacitance of air gaps around wiring.
Innovation Solution
A multi-chamber vacuum processing system is used to form a thermally decomposable organic film on a substrate with a recess, followed by heating to remove excess film, forming a sealing film with plasma, and further heating to thermally decompose the organic film under the sealing film, creating an air gap with a desired shape.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If an organic film is formed in a recess using conventional methods, then the recess can be filled with organic material, but voids and seams form in the organic film resulting in poor cavity shape precision
Solution Approach 1:
The patent changes the molecular structure parameters of the organic film by selecting specific monomers (terminal bifunctional linear chain structure with side chains) to achieve optimal film formation properties. This resolves the contradiction by modifying material parameters to prevent void and seam formation while maintaining precise cavity shape.
Solution Approach 2:
The patent uses a composite approach by combining specific monomers (amine and isocyanate with terminal bifunctional linear chain structure) to form an organic film with enhanced properties. This composite material strategy ensures both film integrity and precise cavity shape by leveraging the synergistic effects of the selected monomers.
2Manufacturing precision
If the organic film is removed by heating to form air gaps, then the desired cavity shape can be achieved, but the process time increases due to multiple heating and cooling cycles
Solution Approach 1:
The patent modifies the thermal parameters of the organic film by selecting monomers with appropriate glass transition temperatures and thermal stability. This allows for optimized heating cycles that achieve complete film removal and precise cavity formation while minimizing process time through controlled thermal transitions.
3Ease of manufacture
If conventional monomers are used to form the organic film, then the film can be deposited, but voids and seams form affecting parasitic capacitance control
Solution Approach 1:
The patent changes the chemical parameters of the monomers by selecting terminal bifunctional linear chain structures with side chains, which fundamentally alters the film formation behavior. This resolves the contradiction by modifying molecular parameters to achieve both easy deposition and precise parasitic capacitance control through uniform film formation without voids or seams.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method ensures the formation of a cavity with a precise shape, reducing parasitic capacitance variations and improving manufacturing throughput by suppressing voids and seams in the organic film.
Implementation Method 1
forming an organic film composed of a polymer having a urea bond in a recess by supplying amine and isocyanate to a surface of a substrate having the recess
Implementation Method 2
the substrate is heated to thermally decompose the organic film through the sealing film, thereby forming an air gap in the recess
Implementation Method 3
removing the organic film in the recess by heating the substrate that has been subjected to the predetermined process to depolymerize the organic film
Data Source
AI summary
A semiconductor device manufacturing method includes: forming an organic film composed of a polymer having a urea bond in a recess by supplying amine and isocyanate to a surface of a substrate having the recess; performing a predetermined process on the substrate on which the organic film is formed in the recess; and removing the organic film in the recess by heating the substrate that has been subjected to the predetermined process to depolymerize the organic film. The amine and the isocyanate have a terminal bifunctional linear chain structure having two functional groups at both ends of a linear chain. At least one of the amine or the isocyanate has side chains connected to the linear chain contained in the linear chain structure.