Semiconductor Interlayer Insulating Film Air Gap Segmentation
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Solution Overview
Problem
As semiconductor devices downscale, the integration and power consumption requirements increase, necessitating the use of copper wiring, but the formation of air gaps in interlayer insulating films to reduce coupling between wirings is challenging, leading to decreased yield and reliability due to lack of firm support for the insulating films.
Innovation Solution
A semiconductor device with periodically arranged air gaps in the interlayer insulating film, which are formed using a directed self-assembly lithography process, providing stability and reducing coupling between wirings while maintaining sufficient support for the interlayer insulating films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If air gaps are formed in the interlayer insulating film to reduce coupling between wirings, then the coupling between wirings is reduced, but the interlayer insulating film lacks firm support leading to decreased yield and reliability
Solution Approach 1:
The interlayer insulating film is segmented into multiple regions by introducing air gaps that divide the continuous film into isolated sections. This segmentation reduces electromagnetic coupling between adjacent wiring regions while the air gaps are strategically positioned to maintain structural support at critical locations.
Solution Approach 2:
The air gaps are not uniformly distributed but are selectively positioned in specific regions where coupling reduction is most beneficial. The density, size, and placement of air gaps are locally optimized to balance coupling reduction with structural support requirements in different areas of the interlayer insulating film.
2Object-generated harmful factors
If air gaps are formed in the interlayer insulating film, then the coupling between wirings is reduced, but the manufacturing process becomes challenging
Solution Approach 1:
A directed self-assembly lithography process is introduced as an intermediary manufacturing technique to form the air gaps. This process uses block copolymer materials that spontaneously self-assemble into periodic patterns, serving as a mediator between conventional lithography and the desired air gap structure, thereby simplifying the manufacturing process.
Solution Approach 2:
The block copolymer material performs self-service by automatically organizing into periodic patterns through self-assembly without requiring complex external patterning tools. This self-organizing behavior enables the formation of precisely spaced air gaps using relatively simple manufacturing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves improved reliability and performance by firmly supporting the interlayer insulating films with air gaps, reducing coupling between wirings and maintaining stability, thus enhancing the overall product reliability and performance.
Implementation Method 1
A semiconductor device with periodically arranged air gaps in the interlayer insulating film, which are formed using a directed self-assembly lithography process
Data Source
AI summary
A semiconductor device includes a first interlayer insulating film on a substrate, a via which penetrates the first interlayer insulating film, a first etching stop film which extends along an upper surface of the first interlayer insulating film, a second interlayer insulating film on the first etching stop film, the second interlayer insulating film including a plurality of periodically arranged air gaps, a first wiring pattern in the second interlayer insulating film, the first wiring pattern penetrating the first etching stop film and is connected to the via, and a capping film which covers an upper surface of the second interlayer insulating film and an upper surface of the first wiring pattern, each of the plurality of air gaps in the second interlayer insulating film extending from the first etching stop film to the capping film.