Semiconductor Air Gaps Reduce Parasitic Capacitance
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Solution Overview
Problem
The scaling down of semiconductor devices leads to increased challenges in achieving improved quality, yield, performance, and reliability due to issues such as parasitic capacitance between conductive features, which existing technologies have not adequately addressed.
Innovation Solution
A semiconductor device design featuring air gaps between conductive features, specifically between protruding portions of conductive lines, which alleviates parasitic capacitance without requiring additional masks or patterning processes, thereby reducing fabrication costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conductive features are scaled down to improve computing ability, then device density increases, but parasitic capacitance between adjacent conductive features increases
Solution Approach 1:
The patent extracts the harmful dielectric material between adjacent conductive features and replaces it with air gaps. By removing the solid dielectric material from specific regions between conductive lines, the parasitic capacitance is reduced while maintaining the scaled-down device geometry needed for improved computing ability
Solution Approach 2:
The patent applies different dielectric properties to different regions: air gaps (vacuum) are created in specific locations between adjacent conductive features where parasitic capacitance is problematic, while other regions maintain their original dielectric materials. This localized modification reduces capacitance where needed without compromising overall device functionality
2Reliability
If air gaps are introduced to reduce parasitic capacitance, then performance improves, but fabrication complexity increases
Solution Approach 1:
The patent combines the air gap formation process with existing fabrication steps. The air gaps are created by modifying standard dielectric deposition and etching processes that are already part of the fabrication flow, rather than adding entirely new process modules. This integration minimizes the increase in fabrication complexity
Solution Approach 2:
The patent segments the dielectric layer into regions that will become air gaps and regions that will remain as solid dielectric. By selectively removing material in specific segmented areas between conductive features, the complex goal of reducing parasitic capacitance is achieved through controlled material removal rather than attempting to modify the entire structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The air gaps effectively reduce parasitic capacitance between adjacent conductive features, enhancing the performance of semiconductor devices while simplifying the fabrication process and lowering production costs.
Implementation Method 1
parasitic capacitance between conductive features
Data Source
AI summary
The present application discloses a semiconductor device with air gaps for reducing capacitive coupling between conductive features. The semiconductor device includes a first semiconductor structure including a substrate, a first conductive line positioned above the substrate and including two sides, a first protruding portion positioned on one of the two sides of the first conductive line, a second conductive line positioned adjacent to the first conductive line and including two sides, a second protruding portion positioned on one of the two sides of the second conductive line and face onto the first protruding portion, and an air gap positioned between the first protruding portion and the second protruding portion. A distance between the first protruding portion and the second protruding portion is less than a distance between the first conductive line and the second conductive line.