3D Semiconductor Package Air Gaps for Lower Capacitive Coupling
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Solution Overview
Problem
The semiconductor industry faces challenges in reducing capacitive coupling between conductive features in 3D packaging, which hinders signal transmission and limits the scaling of semiconductor packages.
Innovation Solution
The introduction of air gaps between conductive components in semiconductor packages, achieved by bonding two semiconductor structures with recessed surfaces, reduces capacitive coupling by utilizing the low dielectric constant of air, thereby lowering RC delay and improving signal transmission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If semiconductor packages are scaled down in two dimensions to reduce area, then area occupation is reduced, but physical limitations are reached and capacitive coupling between conductive features increases
Solution Approach 1:
The patent transitions from 2D scaling to 3D packaging by bonding multiple semiconductor structures vertically. Air gaps are introduced between bonded surfaces to reduce capacitive coupling between conductive features in different layers, enabling continued scaling while maintaining signal transmission quality through the z-direction dimensionality change
Solution Approach 2:
Air gaps are introduced as intermediary spaces between bonded semiconductor structures. These air gaps, with their low dielectric constant, act as mediators to reduce capacitive coupling between conductive features while maintaining the electrical connection through bonding structures, solving the harmful effect of increased capacitance in 3D packaging
2Productivity
If 3D packaging schemes are adopted to overcome 2D scaling limitations, then integration density is improved, but capacitive coupling between conductive features increases and signal transmission deteriorates
Solution Approach 1:
Air gaps are selectively positioned between specific bonded semiconductor structures where capacitive coupling is problematic. This local application of air gaps provides targeted reduction of capacitive effects in regions with high signal integrity requirements, while maintaining the overall 3D integration density benefits
Solution Approach 2:
Air gaps serve as intermediary low-dielectric regions between conductive features in vertically stacked semiconductor structures. These intermediaries reduce parasitic capacitance and improve signal transmission reliability while preserving the high integration density achieved through 3D packaging
3Productivity
If conductive features are placed closer together to increase integration density, then productivity is improved, but capacitive coupling increases and RC delay worsens
Solution Approach 1:
The patent moves conductive features into the z-direction through vertical stacking of semiconductor structures. By separating features that would be laterally adjacent in 2D into different vertical layers with air gaps between them, the RC delay is reduced while maintaining high integration density through three-dimensional spatial utilization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of air gaps between conductive components in semiconductor packages effectively reduces capacitive coupling, leading to improved signal transmission and enhanced performance by lowering RC delay.
Implementation Method 1
reduces capacitive coupling by utilizing the low dielectric constant of air
Data Source
AI summary
The present application provides a semiconductor package with air gaps for reducing capacitive coupling between conductive features and a method for manufacturing the semiconductor package. The semiconductor package includes a first semiconductor structure and a second semiconductor structure bonded with the first semiconductor structure. The first semiconductor structure has a first bonding surface. The second semiconductor structure has a second bonding surface partially in contact with the first bonding surface. A portion of the first bonding surface is separated from a portion of the second bonding surface, a space between the portions of the first and second bonding surfaces is sealed and forms an air gap in the semiconductor package.