Semiconductor Device With Air Slit Insulating Structure
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Solution Overview
Problem
The semiconductor industry faces challenges in manufacturing complex semiconductor devices due to the scaling down of ICs, which increases processing complexity and requires advanced methods for forming fins and gate structures in semiconductor devices.
Innovation Solution
A method for manufacturing semiconductor devices involves forming fins using photolithography and self-aligned processes, followed by the creation of gate structures and epitaxial source/drain structures to enhance carrier mobility, and the use of a self-aligned insulating structure with an air slit to reduce capacitance and improve device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography and self-aligned processes are used to form fins, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The gate structure is segmented into multiple components including a gate electrode, a first insulating layer, a second insulating layer, and an air slit. This segmentation allows each component to be formed using standard photolithography and self-aligned processes while achieving high overall precision, resolving the contradiction between manufacturing precision and device complexity.
Solution Approach 2:
The air slit acts as an intermediary element between the first insulating layer and the second insulating layer. It provides precise spacing and alignment without requiring complex direct patterning, enabling high manufacturing precision through a relatively simple intermediary structure that reduces overall processing complexity.
2Productivity
If geometry size is decreased to increase functional density, then productivity is improved, but manufacturing precision requirements increase
Solution Approach 1:
The air slit introduces a vertical dimension for precise spacing between insulating layers, allowing horizontal geometry sizes to be scaled down for higher functional density while maintaining precise control through the vertical air slit dimension. This resolves the contradiction by transferring precision control to a different spatial dimension.
Solution Approach 2:
The air slit enables independent control of the spacing parameter between insulating layers without directly constraining the horizontal geometry size parameters. This parameter decoupling allows geometry sizes to be reduced for higher productivity while the air slit spacing parameter maintains the required manufacturing precision.
3Reliability
If a self-aligned insulating structure with air slit is used, then capacitance is reduced, but device complexity increases
Solution Approach 1:
The air slit creates a porous or void structure within the insulating assembly, replacing solid dielectric material with air. This reduces the overall capacitance of the structure while the self-aligned formation method keeps the structural complexity manageable, resolving the contradiction between reliability improvement and device complexity.
Solution Approach 2:
The air slit is formed by selectively removing material or creating a void between the first and second insulating layers. This extraction of dielectric material reduces capacitance for improved device performance, while the self-aligned process ensures the removed space is precisely positioned without requiring complex additional structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the efficient formation of semiconductor devices with improved carrier mobility and reduced RC delay, addressing the complexity of scaling down in IC manufacturing.
Implementation Method 1
The insulating structure has an air slit that reduces capacitance and RC delay, improving device performance
Data Source
AI summary
A semiconductor device includes a substrate, a gate stack over the substrate, an insulating structure over the gate stack, a conductive via in the insulating structure, and an contact etch stop layer (CESL) over the insulating structure. The insulating structure has an air slit therein. The conductive via is electrically connected to the gate stack. A portion of the CESL is exposed in the air slit.