Semiconductor Airbridge Structure for Flat Source Electrode Connection
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Solution Overview
Problem
Conventional airbridges in semiconductor devices suffer from uneven heights, leading to potential short-circuits and damage due to external forces concentrating on convex-shaped portions, compromising the strength and integrity of the connection.
Innovation Solution
The method involves forming airbridges with coplanar surfaces on source electrodes, ensuring uniform thickness and avoiding unevenness, and in some cases, increasing the connection area or forming recesses to disperse external forces, thereby enhancing the airbridge's strength and preventing damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional airbridge is provided with different heights for portions on source electrodes and above gate electrode, then the airbridge can connect source electrodes without contacting gate electrode, but external force concentrates on the convex-shaped portion causing short-circuit or damage
Solution Approach 1:
The airbridge is designed with a substantially flat upper surface that is substantially coplanar with the upper surfaces of the source electrodes, eliminating height differences and convex shapes. This equipotential surface design ensures uniform distribution of external forces across the entire airbridge structure, preventing force concentration at specific points and thereby improving mechanical strength while maintaining reliable electrical connection between source electrodes
2Object-affected harmful factors
If the airbridge has an upwardly convex shape to clear the gate electrode, then the gate electrode and airbridge can be spatially separated, but the convex shape creates a stress concentration point under external force
Solution Approach 1:
The airbridge upper surface is made substantially flat and coplanar with the source electrode upper surfaces, eliminating the upwardly convex shape. This design distributes external forces uniformly across the airbridge surface rather than concentrating stress at the convex portion, thereby reducing stress concentration while maintaining adequate clearance from the gate electrode through proper positioning and insulation
Data Source
AI summary
A method for manufacturing a semiconductor device includes a process of providing two source electrodes on a substrate, a process of providing a gate electrode on one surface of the substrate between the two source electrodes, a process of providing an insulating film on the gate electrode, the substrate, and side surfaces of the two source electrodes, a process of providing an airbridge foundation resist on the insulating film, providing an airbridge on the two source electrodes and the airbridge foundation resist, and a process of removing the airbridge foundation resist, in which surfaces of the two source electrodes at sides opposite to the substrate and a front surface of the airbridge foundation resist provided in the subsequent process are substantially coplanar.