Semiconductor Electrode Brazing With Al for High-Temperature Bonding
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Solution Overview
Problem
The existing semiconductor devices face challenges in reducing manufacturing processes, heat resistance, and operation temperature limitations due to the use of solder for bonding electrodes, especially when incorporating wide bandgap semiconductors like SiC or GaN, which require higher heat resistance and operating temperatures.
Innovation Solution
The use of aluminum (Al) brazing material for bonding both the lower surface electrode and conductive pattern, as well as the upper surface electrode and inner wiring member, to facilitate simultaneous bonding and reduce heat resistance, thereby increasing the operation temperature range.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If solder is used for bonding the lower surface electrode and substrate, then bonding can be performed, but the operation temperature is limited by the low melting point of solder
Solution Approach 1:
The patent changes the material parameter of the bonding material from solder to Al brazing material, which has a significantly higher melting point. This parameter change enables the device to operate at higher temperatures while maintaining bonding reliability, directly resolving the contradiction between operation temperature range and bonding reliability.
Solution Approach 2:
The patent uses Al brazing material as a composite bonding solution that combines the advantages of high-temperature resistance with effective bonding capability. This composite material approach allows simultaneous achievement of high operation temperature range and reliable bonding, resolving the technical contradiction.
2Productivity
If sequential bonding is performed (lower surface electrode first, then upper surface electrode), then bonding can be completed, but the manufacturing process time increases
Solution Approach 1:
The patent merges the bonding processes of the lower surface electrode and upper surface electrode into a single simultaneous bonding operation using Al brazing material. This combining of previously sequential steps into one concurrent process directly reduces manufacturing process time and improves productivity, resolving the contradiction between manufacturing efficiency and takt time.
3Power
If the chip size is reduced to increase current density, then the device performance improves, but the heat resistance of the structure around the chip increases
Solution Approach 1:
The patent changes the thermal parameter of the bonding material from solder with low heat resistance to Al brazing material with high heat resistance. This parameter change allows the chip size to be reduced for higher current density while the improved heat resistance of the bonding material compensates for and manages the increased heat generation, resolving the contradiction between power and temperature.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing processes, lowers heat resistance, and enhances the operational temperature range of semiconductor devices, particularly those using SiC or GaN elements.
Implementation Method 1
bonding of the lower surface electrode and the conductive pattern and bonding of the upper surface electrode and the inner wiring member are performed by an Al brazing material which is a brazing material made of Al as a main component
Data Source
AI summary
A semiconductor device includes an insulating substrate, a semiconductor element bonded to the insulating substrate, and an inner wiring member bonded to the semiconductor element. The insulating substrate includes a conductive pattern on an upper surface. The semiconductor element includes an upper surface electrode on an upper surface and a lower surface electrode on a lower surface, and the lower surface electrode is bonded to the conductive pattern of the insulating substrate. The inner wiring member is bonded to the upper surface electrode of the semiconductor element. Both bonding of the lower surface electrode and the conductive pattern and bonding of the upper surface electrode and the inner wiring member are performed by an Al brazing material.