Semiconductor Treatment Composition for Selective ALD Inhibition
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Solution Overview
Problem
Existing methods for forming films on semiconductor devices using atomic layer deposition (ALD) fail to inhibit the formation of coating films where they are not intended, leading to inaccuracies in fine pattern formation due to the formation of thick films even where modified films are present.
Innovation Solution
A composition comprising a compound with specific functional groups and polymerizable groups, along with a solvent, is used to treat semiconductor devices, allowing for the selective formation of a coating film that inhibits ALD coating film formation where not intended, using a compound with a basic or acidic functional group with specific pKa values and a polymerizable group that forms a cured film with high heat resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a polymer film is formed on a substrate using conventional monomers, then a modified film is formed, but the ALD coating film forms thickly even on the modified film region
Solution Approach 1:
The patent changes the chemical parameters of the monomer by selecting specific functional groups (carboxylic acid, phenolic hydroxyl, or amine groups with specific pKa values) to optimize the inhibitory effect. By controlling the pKa value within specific ranges and adjusting the molar ratio of functional groups, the modified film achieves sufficient inhibition of ALD coating film formation while maintaining pattern formation accuracy.
Solution Approach 2:
The patent creates a composite structure by forming a polymer film with specific functional groups that combines the properties of the substrate and the functional monomers. This composite modified film exhibits both adhesion to the substrate and high inhibitory properties against ALD coating film formation, resolving the contradiction between film formation and inhibition effectiveness.
2Ease of manufacture
If conventional monomers are used to form a polymer film, then film formation is achieved, but the ALD coating film cannot be sufficiently inhibited
Solution Approach 1:
The patent applies local quality by endowing different regions of the substrate with different properties through selective polymer film formation. The modified film regions with specific functional groups exhibit high inhibitory properties, while non-modified regions remain receptive to ALD coating film formation, achieving spatial selectivity and preventing thick film formation in unintended areas.
3Productivity
If photolithography is used for pattern formation, then conventional manufacturing is achieved, but registration accuracy is insufficient for further miniaturization
Solution Approach 1:
The patent replaces the photolithography mechanism with a chemical self-assembly mechanism. Instead of using light exposure and chemical etching, the method uses monomer adsorption and polymerization on the substrate surface to directly form patterns. This substitution enables higher precision pattern formation without the registration errors inherent in photolithography, supporting further miniaturization while maintaining manufacturing efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables the formation of a coating film with high inhibitory properties for ALD coating film formation, ensuring precise and accurate film patterns by selectively forming films where intended, thereby enhancing the precision of semiconductor device manufacturing.
Implementation Method 1
a compound having a specific functional group bonded to or adsorbed on a substrate and a polymerizable group
Implementation Method 2
a polymerizable group that forms a cured film with high heat resistance
Data Source
AI summary
The present invention provides a composition for treating a semiconductor device, a compound, a method for producing a modified substrate, and a method for producing a semiconductor device, each of which can form a coating film having a high coat-forming property for inhibiting the formation of an ALD coating film. The composition for treating a semiconductor device of an embodiment of the present invention includes a compound having a specific functional group bonded to or adsorbed on a substrate and a polymerizable group, and a solvent, in which the specific functional group is a basic functional group or an acidic functional group, in a case where the specific functional group is the basic functional group, an acid dissociation constant of a conjugate acid of a compound obtained by adding a proton to the basic functional group is 7.0 or more, and in a case where the specific functional group is the acidic functional group, an acid dissociation constant of the compound upon dissociation of a proton from the acidic functional group is 5.0 or less.