Semiconductor Device Crystalline AlGaN Layer Leakage Current
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Solution Overview
Problem
Current semiconductor devices face challenges in improving characteristics such as carrier density and leakage current, particularly due to unintended element penetration and grain boundary-related issues in nitride semiconductor structures.
Innovation Solution
The semiconductor device incorporates a crystalline Alx3Ga1-x3N member between the third semiconductor portion and the third electrode portion, with an amorphous AlN insulating member between the electrodes, and a stacked SiN insulating structure to enhance carrier density and suppress leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a nitride semiconductor structure is used to improve high-frequency characteristics, then device performance is enhanced, but unintended element penetration and grain boundary issues cause increased leakage current
Solution Approach 1:
The patent introduces a crystalline AlxGa1-xN member as an intermediary layer between the third semiconductor portion and the third electrode portion. This intermediate layer acts as a mediator that suppresses leakage current by preventing unintended element penetration while maintaining the high-frequency characteristics of the nitride semiconductor structure.
Solution Approach 2:
The patent changes the crystalline state parameter of the AlxGa1-xN layer from amorphous to crystalline. This parameter change significantly reduces leakage current by eliminating grain boundary-related conduction paths while preserving the beneficial electrical properties of the nitride semiconductor structure for high-frequency operation.
2Quantity of substance
If conventional insulating members are used between electrodes, then device structure is simplified, but carrier density cannot be sufficiently increased
Solution Approach 1:
The patent employs a composite insulating structure consisting of multiple layers with different materials and crystalline states. The combination of crystalline AlxGa1-xN, amorphous AlN, and SiN layers creates a composite structure that achieves high carrier density through controlled element penetration while managing the complexity through systematic material selection.
Solution Approach 2:
The patent applies different material compositions and crystalline states to different regions of the insulating structure. The crystalline AlxGa1-xN layer is positioned where carrier generation is needed, while amorphous AlN and SiN layers are placed where leakage suppression is prioritized. This local quality differentiation optimizes carrier density without uniformly increasing structural complexity throughout the entire device.
Data Source
AI summary
According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, first and second insulating members, and a first member. The third electrode includes a first electrode portion. The first electrode portion is between the first and second electrodes. The first semiconductor layer includes first, second, third, fourth, and fifth partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The first insulating member includes first and second insulating regions. The second insulating member includes first and second insulating portions. The first insulating portion is between the fourth partial region and the first insulating region. The second insulating portion is between the fifth partial region and the second insulating region. The second semiconductor layer includes first, second, and third semiconductor portions.