Semiconductor Structure With Aligned Transistors for Lower Resistance

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Solution Overview

Problem

With the miniaturization of semiconductor devices, the interconnection resistance of adjacent conductors increases, leading to a decrease in driving current under the same driving voltage, which affects the driving ability and increases power consumption.

Innovation Solution

A semiconductor structure is designed with aligned transistors sharing a common source plate, using single crystal semiconductor channels, and drain contacts connected to even numbers of transistors, with magnetic tunnel junctions on the drain contacts, ensuring stable signal transmission and reduced contact resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If the contact area between conductors is decreased to achieve miniaturization, then the device size is reduced, but the interconnection resistance increases and driving current decreases

Engineering Contradiction:
Improvedevice sizeVSAvoiddriving ability
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

Multiple transistors share common source and drain contacts, merging previously separate contact structures. This reduces the total number of contacts while maintaining transistor functionality, thereby reducing interconnection resistance and improving driving ability despite miniaturization

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The common source and drain contacts serve multiple transistors simultaneously, making these contacts multi-functional. This universal approach reduces the overall contact area required while maintaining electrical connectivity for all transistors, resolving the contradiction between miniaturization and driving ability

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Reliability

If the driving voltage is increased to maintain driving current, then the driving ability is maintained, but the power consumption increases

Engineering Contradiction:
Improvedriving abilityVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSUse of energy by stationary object

Solution Approach 1:

By merging source and drain contacts to serve multiple transistors, the interconnection resistance is reduced. This allows the device to maintain adequate driving current at lower voltages, thereby reducing power consumption while preserving driving ability

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The structure maintains a larger driving current under preset voltage, reduces power consumption, and enhances signal transmission stability, thus improving the performance and competitiveness of electronic devices.

Implementation Method 1

a plurality of magnetic tunnel junctions, located on the drain contacts and electrically connected with the drain contacts in one-to-one correspondence

Methodology Applied
Scientific EffectQuantum tunneling:

Data Source

PatentUS12419058B2Semiconductor structure, manufacturing method therefor and memory
Publication Date: 2025.09.16 CHANGXIN MEMORY TECH INC
  • US12419058B2 patent drawing
  • US12419058B2 patent drawing
  • US12419058B2 patent drawing

AI summary

A semiconductor structure, a manufacturing method therefor and a memory are provided. The semiconductor structure may at least include: a plurality of aligned transistors, in which the transistors share a same source plate, channels of the transistors are located above the source plate, the channel length direction of the transistors is perpendicular to a surface of the source plate, and a material of the channels includes a single crystal semiconductor; a plurality of drain contacts, electrically connected with drains of the transistors, in which even number of the transistors share one same drain contact; and a plurality of magnetic tunnel junctions, located on the drain contacts and electrically connected with the drain contacts in one-to-one correspondence.